Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

2005 ◽  
Vol 86 (25) ◽  
pp. 251901 ◽  
Author(s):  
Sangmoo Choi ◽  
Hyundeok Yang ◽  
Man Chang ◽  
Sungkweon Baek ◽  
Hyunsang Hwang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nonvolatile Memory ◽  
Silicon Nanocrystals ◽  
Charge Trapping ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
A Charge ◽  
Memory Characteristics

Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

2005 ◽  
Vol 80 ◽  
pp. 264-267 ◽  
Author(s):  
S. Choi ◽  
S.S. Kim ◽  
H. Yang ◽  
M. Chang ◽  
S. Jeon ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Devices ◽  
Metal Nitride ◽  
Nonvolatile Memory Devices ◽  
A Charge

Silicon Nanocrystalline Nonvolatile Memory - Characterization and Analysis

2016 ◽  
Vol 39 ◽  
pp. 134-150
Author(s):  
Valerii Ievtukh ◽  
A. Nazarov
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Nanocrystals ◽  
Memory Window ◽  
Experimental Results ◽  
Memory Devices ◽  
Mos Capacitor ◽  
Mos Structure ◽  
Capacitance Voltage ◽  
Nonvolatile Memory Devices ◽  
Bipolar Memory

In this work, nanocrystal nonvolatile memory devices comprising of silicon nanocrystals located in gate oxide of MOS structure, were comprehensively studied on specialized modular data acquisition setup developed for capacitance-voltage measurements. The memory window formation, memory window retention and charge relaxation experimental methods were used to study the trapping/emission processes inside the dielectric layer of MOS capacitor memory. The trapping/emission processes were studied in standard bipolar memory mode and in new unipolar memory mode, which is specific for nanocrystalline nonvolatile memory. The analysis of experimental results shown that unipolar programming mode is more favourable for nanocrystalline memory operation due to lower wearing out and higher breakdown immunity of the MOS device’s oxide. The study was performed for two types of nanocrystalline memory devices: with one and two silicon nanocrystalline 2D layers in oxide of MOS structure correspondingly. The electrostatic modelling was presented to explain the experimental results.

Investigation of Channel Hot Electron Injection by Localized Charge-Trapping Nonvolatile Memory Devices

2004 ◽  
Vol 51 (3) ◽  
pp. 444-451 ◽  
Author(s):  
E. Lusky ◽  
Y. Shacham-Diamand ◽  
G. Mitenberg ◽  
A. Shappir ◽  
I. Bloom ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Electron Injection ◽  
Memory Devices ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nonvolatile Memory Devices

Organic nonvolatile memory devices with charge trapping multilayer graphene film

2012 ◽  
Vol 23 (10) ◽  
pp. 105202 ◽  
Author(s):  
Yongsung Ji ◽  
Minhyeok Choe ◽  
Byungjin Cho ◽  
Sunghoon Song ◽  
Jongwon Yoon ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Graphene Film ◽  
Charge Trapping ◽  
Multilayer Graphene ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Two-Dimensional WSe2/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

2019 ◽  
Vol 11 (37) ◽  
pp. 34424-34429 ◽  
Author(s):  
Haining Liu ◽  
Menghua Cui ◽  
Chunhe Dang ◽  
Wen Wen ◽  
Xinsheng Wang ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Devices ◽  
Two Dimensional ◽  
Interface Charge ◽  
Nonvolatile Memory Devices ◽  
Organic Acceptor

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

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