Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking Layer

2011 ◽  
Vol 58 (11) ◽  
pp. 3847-3851 ◽  
Author(s):  
Fa-Hsyang Chen ◽  
Tung-Ming Pan ◽  
Fu-Chien Chiu
Keyword(s):  
Metal Oxide ◽  
Charge Trapping ◽  
Memory Device ◽  
Blocking Layer ◽  
High K

scholarly journals Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 799 ◽  
Author(s):  
Jer Wang ◽  
Chyuan Kao ◽  
Chien Wu ◽  
Chun Lin ◽  
Chih Lin
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Dielectric Constants ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Band Shift ◽  
K Value ◽  
High K

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb2O5 and Ti-doped Nb2O5(TiNb2O7) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆VFB) window of the TiNb2O7 charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb2O7 nano-layer is because of a better electrical and structural performance, compared to the Nb2O5 nano-layer.

Improved metal–oxide–nitride–oxide–silicon-type flash device with high-k dielectrics for blocking layer

2003 ◽  
Vol 94 (8) ◽  
pp. 5408 ◽  
Author(s):  
Sangmoo Choi ◽  
Myungjun Cho ◽  
Hyunsang Hwang ◽  
Jung Woo Kim
Keyword(s):  
Metal Oxide ◽  
Blocking Layer ◽  
High K ◽  
Nitride Oxide

Metal-oxide-high-k-oxide-silicon memory structure incorporating a Tb2O3 charge trapping layer

2010 ◽  
Vol 97 (1) ◽  
pp. 012906 ◽  
Author(s):  
Tung-Ming Pan ◽  
Ji-Shing Jung ◽  
Fa-Hsyang Chen
Keyword(s):  
Metal Oxide ◽  
Charge Trapping ◽  
Memory Structure ◽  
High K

Charge trapping memory device based on the Ga 2 O 3 films as trapping and blocking layer

2019 ◽  
Vol 28 (10) ◽  
pp. 106802
Author(s):  
Bing Bai ◽  
Hong Wang ◽  
Yan Li ◽  
Yunxia Hao ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Memory Device ◽  
Blocking Layer ◽  
Charge Trapping Memory

Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer

2009 ◽  
Vol 30 (7) ◽  
pp. 775-777 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Te-Chiang Liu ◽  
Tien-Ko Wang ◽  
Pei-Jer Tzeng ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
High K
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