TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs

2011 ◽  
Vol 58 (11) ◽  
pp. 3736-3742 ◽  
Author(s):  
Chien-Liang Chen ◽  
Ya-Chin King
Keyword(s):  
Dielectric Breakdown ◽  
Thickness Effect ◽  
Gate Electrode ◽  
Metal Gate ◽  
Electrode Thickness ◽  
Tin Metal

scholarly journals SOI n- and pMuGFET devices with different TiN metal gate thickness and crystallographic orientation of the sidewalls

2012 ◽  
Vol 7 (2) ◽  
pp. 107-112
Author(s):  
Michele Rodrigues ◽  
Milene Galeti ◽  
Nadine Collaert ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
...  
Keyword(s):  
Crystallographic Orientation ◽  
Voltage Gain ◽  
Gate Electrode ◽  
Metal Gate ◽  
Electrode Thickness ◽  
Tin Metal ◽  
Output Conductance

This work presents an analysis of SOI p- and nMuGFET devices with different TiN metal gate electrode thickness for rotated and standard structures.Thinner TiN metal gate allows achieving a higher intrinsic voltage gain in spite of the reduced variation observed of the gm/IDS characteristics. This effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. Even with the larger mobility of the rotated nMuGFET devices when compared with the standard ones, the larger output conductance degradation resulted in an almost similar intrinsic voltage gain. P-channel devices, when implemented on the rotated layout, offer a lower intrinsic voltage gain.The GIDL current was also analyzed on these devices, indicating to be larger in thinner metal gate and rotated configuration.

scholarly journals Analog Performance of SOI nMuGFETs with Different TiN Gate Electrode Thickness and High-k Dielectrics

2011 ◽  
Vol 6 (2) ◽  
pp. 102-106
Author(s):  
Milene Galeti ◽  
Michele Rodrigues ◽  
Nadine Collaert ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Voltage Gain ◽  
Gate Electrode ◽  
Metal Gate ◽  
Short Channel ◽  
High K ◽  
Analog Performance ◽  
Tin Metal ◽  
High K Dielectric ◽  
The Impact

This work presents an analysis of the analog performance of SOI MuGFET devices and the impact of different TiN metal gate electrode thickness.Thinner TiN metal gate allows achieving large gain and this effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. This VEA increase suggests an increase of the transversal electrical field for thin TiN metal gate (reduced gate oxide thickness) that is confirmed with the increment of the GIDL current.This impact on the voltage gain is maintained for short channel length.The impact of different gate dielectrics was also studied where high-k dielectric indicated a higher VT due to a VFB variation. Additionally, lower intrinsic voltage gain was observed for hafnium dielectric and this can be related to the lower Early voltage (VEA) present in this devices.

Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs

2009 ◽  
Author(s):  
Shigeto Fukatsu ◽  
Izumi Hirano ◽  
Kosuke Tatsumura ◽  
Akiko Masada ◽  
Shosuke Fujii ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Electrode ◽  
Metal Gate ◽  
Dual Nature

Work function modulation for TiN/Ta/TiN metal gate electrode

2010 ◽  
Author(s):  
Xiao-Rong Wang ◽  
Yu-Long Jiang ◽  
Qi Xie ◽  
Christophe Detavernier ◽  
Guo-Ping Ru ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Electrode ◽  
Metal Gate ◽  
Tin Metal

Boron Transport Through Surface Channel pMOS Using W-poly Metal Gate Electrode

2002 ◽  
Vol 149 (8) ◽  
pp. G441 ◽  
Author(s):  
Sang-Wook Park ◽  
Dong-Jin Kim ◽  
Chan-Ho Lee ◽  
Seung-Cheol Lee ◽  
Noh-Yeal Kwak ◽  
...  
Keyword(s):  
Gate Electrode ◽  
Metal Gate

scholarly journals A Study on Improvement and Degradation of Si/SiO2Interface Property for Gate Oxide with TiN Metal Gate

2008 ◽  
Vol 9 (1) ◽  
pp. 6-11 ◽  
Author(s):  
Byung-Hyun Lee ◽  
Yong-Il Kim ◽  
Bong-Soo Kim ◽  
Dong-Soo Woo ◽  
Yong-Jik Park ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Metal Gate ◽  
Tin Metal

Low-resistivity poly-metal gate electrode durable for high-temperature processing

1996 ◽  
Vol 43 (11) ◽  
pp. 1864-1869 ◽  
Author(s):  
Y. Akasaka ◽  
S. Suehiro ◽  
K. Nakajima ◽  
T. Nakasugi ◽  
K. Miyano ◽  
...  
Keyword(s):  
High Temperature ◽  
Gate Electrode ◽  
Metal Gate ◽  
Low Resistivity ◽  
High Temperature Processing
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