Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

2011 ◽  
Vol 58 (6) ◽  
pp. 1741-1747 ◽  
Author(s):  
Byoungchan Oh ◽  
Heung-Jae Cho ◽  
Heesang Kim ◽  
Younghwan Son ◽  
Taewook Kang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Oxide Trap

Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current

2011 ◽  
Vol 58 (5(2)) ◽  
pp. 1518-1521 ◽  
Author(s):  
Heung-Jae Cho ◽  
Younghwan Son ◽  
Sanghoon Lee ◽  
Jong-Ho Lee ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Gate Oxide ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Oxide Trap ◽  
Thin Gate Oxide

Characterization of Random Telegraph Noise Generated by Process- and Cycling-Stress-Induced Traps in 26 nm NAND Flash Memory

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CA07 ◽  
Author(s):  
Bong-Su Jo ◽  
Ho-Jung Kang ◽  
Sung-Min Joe ◽  
Min-Kyu Jeong ◽  
Kyung-Rok Han ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Transistor-level characterization of static random access memory bit failures induced by random telegraph noise

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED05 ◽  
Author(s):  
Tomoko Mizutani ◽  
Takuya Saraya ◽  
Kiyoshi Takeuchi ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

scholarly journals Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices

2015 ◽  
Vol 147 ◽  
pp. 59-62 ◽  
Author(s):  
M.B. Gonzalez ◽  
J. Martin-Martinez ◽  
R. Rodriguez ◽  
M.C. Acero ◽  
M. Nafria ◽  
...  
Keyword(s):  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Noise Characterization
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