Enhanced stability of the HfO2 electrolyte and reduced working voltage of a CB-RAM by an ionic liquid

2015 ◽  
Vol 3 (27) ◽  
pp. 6966-6969 ◽  
Author(s):  
A. Harada ◽  
H. Yamaoka ◽  
R. Ogata ◽  
K. Watanabe ◽  
K. Kinoshita ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Random Access ◽  
Random Access Memory ◽  
Operating Voltage ◽  
Access Memory ◽  
Conducting Bridge ◽  
Enhanced Stability

Supplying a trace volume of ionic liquid, [bmim][Tf2N], which contains 5000 ppm of H2O, on the HfO2 film in the conducting-bridge random access memory composed of Cu/HfO2/Pt allows improved efficiency of the memory properties: reduction of operating voltage and prevention of destruction of the electrolyte.

Improvement of switching endurance of conducting-bridge random access memory by addition of metal-ion-containing ionic liquid

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CE13 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Atsushi Sakaguchi ◽  
Akinori Harada ◽  
Hiroki Yamaoka ◽  
Satoru Kishida ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Metal Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge

scholarly journals A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2451
Author(s):  
Yabo Qin ◽  
Zongwei Wang ◽  
Yaotian Ling ◽  
Yimao Cai ◽  
Ru Huang
Keyword(s):  
Neural Network ◽  
Formation Energy ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Collective Effects ◽  
Operating Voltage ◽  
Access Memory ◽  
Intelligent Algorithms ◽  
Network Mapping

Resistive random-access memory (RRAM) with the ability to store and process information has been considered to be one of the most promising emerging devices to emulate synaptic behavior and accelerate the computation of intelligent algorithms. However, variation and limited resistance levels impede RRAM as a synapse for weight storage in neural network mapping. In this work, we investigate a TaOx-based RRAM with Al ion local doping. Compared with a device without doping, the device with locally doped Al ion exhibits excellent uniformity and analog characteristics. The operating voltage and resistance states show tighter distributions. Over 150 adjustable resistance states can be achieved through tuning compliance current (CC) and reset stop voltage. Moreover, incremental resistance switching is available under optimized identical pulses. The improved uniformity and analog characteristics can be attributed to the collective effects of reduced oxygen vacancy (Vo) formation energy and weak conductive filaments induced by the local Al ion dopants.

Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

2017 ◽  
Vol 111 (11) ◽  
pp. 113108 ◽  
Author(s):  
Sridhar Chandrasekaran ◽  
Firman Mangasa Simanjuntak ◽  
Tsung-Ling Tsai ◽  
Chun-An Lin ◽  
Tseung-Yuen Tseng
Keyword(s):  
Barrier Layer ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Conducting Bridge
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