Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

2009 ◽  
Vol 56 (10) ◽  
pp. 2327-2334 ◽  
Author(s):  
Bo Zhang ◽  
Zhaoji Li ◽  
Shengdong Hu ◽  
Xiaorong Luo
Keyword(s):  
High Voltage ◽  
Dielectric Layer ◽  
Field Enhancement ◽  
Silicon On Insulator

Tuning the Localized Surface Plasmon Resonance of Al-Al2O3 Nanosphere Towards NIR Region by Gold Coating

2020 ◽  
Vol 12 ◽  
Author(s):  
Jyoti Katyal ◽  
Shivani Gautam
Keyword(s):  
Electric Field ◽  
Field Distribution ◽  
Dielectric Layer ◽  
Electric Field Distribution ◽  
Active Material ◽  
Visible Region ◽  
Field Enhancement ◽  
Localized Surface Plasmon ◽  
Sers Substrate ◽  
Al Nanoparticles

Background: A relatively narrow LSPR peak and a strong inter band transition ranging around 800 nm makes Al strongly plasmonic active material. Usually, Al nanoparticles are preferred for UV-plasmonic as the SPR of small size Al nanoparticles locates in deep UV-UV region of the optical spectrum. This paper focused on tuning the LSPR of Al nanostructure towards infrared region by coating Au layer. The proposed structure has Au as outer layer which prevent the further oxidation of Al nanostructure. Methods: The Finite Difference Time Domain (FDTD) and Plasmon Hybridization Theory has been used to evaluated the LSPR and field enhancement of single and dimer Al-Al2O3-Au MDM nanostructure. Results: It is observed that the resonance mode show dependence on the thickness of Al2O3 layer and also on the composition of nanostructure. The Au layered MDM nanostructure shows two peak of equal intensities simultaneously in UV and visible region tuned to NIR region. The extinction spectra and electric field distribution profiles of dimer nanoparticles are compared with monomer to reveal the extent of coupling. The dimer configuration shows higher field enhancement ~107 at 1049 nm. By optimizing the thickness of dielectric layer the MDM nanostructure can be used over UV-visible-NIR region. Conclusion: The LSPR peak shows dependence on the thickness of dielectric layer and also on the composition of nanostructure. It has been observed that optimization of size and thickness of dielectric layer can provide two peaks of equal intensities in UV and Visible region which is advantageous for many applications. The electric field distribution profiles of dimer MDM nanostructure enhanced the field by ~107 in visible and NIR region shows its potential towards SERS substrate. The results of this study will provide valuable information for the optimization of LSPR of Al-Al2O3-Au MDM nanostructure to have high field enhancement.

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

2019 ◽  
Vol 40 (4) ◽  
pp. 593-596 ◽  
Author(s):  
Xin Zhou ◽  
Zhangyi'an Yuan ◽  
Lei Shu ◽  
Ming Qiao ◽  
Zhenlin Lu ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Enhancement ◽  
Total Ionizing Dose ◽  
Dose Irradiation
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