Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs

2008 ◽  
Vol 55 (9) ◽  
pp. 2386-2396 ◽  
Author(s):  
O. Weber ◽  
S. Takagi
Keyword(s):  
Coulomb Scattering ◽  
Experimental Examination ◽  
Strained Si ◽  
Physical Understanding

Low temperature mobility improvement in high-mobility strained-Si/Si1-xGex multilayer MOSFETs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-57-Pr3-60
Author(s):  
J. B. Roldán ◽  
F. Gámiz ◽  
J. A. López-Villanueva ◽  
J. E. Carceller
Keyword(s):  
Low Temperature ◽  
High Mobility ◽  
Strained Si

Technique for measuring the residual strain in strained Si/SiGe MOSFET structures using Raman spectroscopy

2004 ◽  
Vol 95 (5) ◽  
pp. 340-344 ◽  
Author(s):  
P. Dobrosz ◽  
S. J. Bull ◽  
S. H. Olsen ◽  
A. G. O'Neill
Keyword(s):  
Raman Spectroscopy ◽  
Residual Strain ◽  
Strained Si
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