Avalanche Breakdown Due to 3-D Effects in the Impact-Ionization MOS (I-MOS) on SOI: Reliability Issues

2008 ◽  
Vol 55 (6) ◽  
pp. 1373-1378 ◽  
Author(s):  
FrÉdÉric Mayer ◽  
Cyrille Le Royer ◽  
Denis Blachier ◽  
Laurent Clavelier ◽  
Simon Deleonibus
Keyword(s):  
Impact Ionization ◽  
Avalanche Breakdown ◽  
The Impact

Comprehensive Study of Impact Ionization Coefficients of 4H-SiC

2004 ◽  
Vol 815 ◽  
Author(s):  
T. Hatakeyama ◽  
T. Watanabe ◽  
K. Kojima ◽  
N. Sano ◽  
T. Shinohe ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Impact Ionization ◽  
Avalanche Breakdown ◽  
Doping Density ◽  
Electric Field Dependence ◽  
Saturation Velocity ◽  
Large Anisotropy ◽  
Ionization Coefficients ◽  
The Impact ◽  
Comprehensive Study

AbstractThe electric field dependence and anisotropy of the impact ionization coefficients of 4H-SiC are investigated by means of the avalanche breakdown behavior of p+n diodes. The breakdown voltages as a function of doping density and the multiplication factors of a leakage current are obtained using p+n diode fabricated on (0001) and (1120) 4H-SiC epitaxial wafers. The obtained impact ionization coefficients show large anisotropy; the breakdown voltage of a p+n diode on (1120) wafer is 60% of that on (0001) wafer. We have shown that anisotropy of the impact ionization coefficients is attributable to the anisotropy of saturation velocity originated from the electronic structure of 4H-SiC.

Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells

2006 ◽  
Vol 955 ◽  
Author(s):  
Shengkun Zhang ◽  
X. Zhou ◽  
Wubao Wang ◽  
R. R. Alfano ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Impact Ionization ◽  
Low Voltage ◽  
Defect Density ◽  
Control Sample ◽  
Avalanche Breakdown ◽  
Ionization Coefficient ◽  
The Impact ◽  
Injection Modes

ABSTRACTIn this work, electro-luminescence (EL) of a AlGaN p-i-n diode have been investigated in both avalanche and injection modes. The active i-region of the diode consists of Al0.1Ga0.9N/Al0.15Ga0.85N MQWs. Strong interband luminescence from the Al0.1Ga0.9N active layers was observed when operating the device in both avalanche and injection modes. The threshold voltage for avalanche breakdown is as low as 9 V. This indicates that the impact ionization coefficient of electrons is greatly enhanced in these Al0.1Ga0.9N/Al0.15Ga0.85N MQWs comparing to AlGaN bulk materials. Polarization-induced electric fields in the Al0.1Ga0.9N well layers are believed to be responsible for the enhancement of the ionization coefficient. In a control sample that has higher defect density, the electroluminescence was dominated by long-wavelength emissions, which results from impact ionizations of the defect levels.

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

1990 ◽  
Vol 57 (3) ◽  
pp. 249-251 ◽  
Author(s):  
H. Kuwatsuka ◽  
T. Mikawa ◽  
S. Miura ◽  
N. Yasuoka ◽  
Y. Kito ◽  
...  
Keyword(s):  
Impact Ionization ◽  
The Impact ◽  
Ionization Rates

Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures

2001 ◽  
Vol 89 (1) ◽  
pp. 327-331
Author(s):  
Eugenio F. Prokhorov ◽  
Jesus González-Hernández ◽  
Nikolai B. Gorev ◽  
Inna F. Kodzhespirova ◽  
Yury A. Kovalenko
Keyword(s):  
Thin Film ◽  
Field Distribution ◽  
Impact Ionization ◽  
Deep Traps ◽  
The Impact
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