Effect of the impact ionization of deep traps on the field distribution in planar thin-film GaAs structures

2001 ◽  
Vol 89 (1) ◽  
pp. 327-331
Author(s):  
Eugenio F. Prokhorov ◽  
Jesus González-Hernández ◽  
Nikolai B. Gorev ◽  
Inna F. Kodzhespirova ◽  
Yury A. Kovalenko
Keyword(s):  
Thin Film ◽  
Field Distribution ◽  
Impact Ionization ◽  
Deep Traps ◽  
The Impact

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

The impact cross section of ErF3 centers in ZnS thin film

1988 ◽  
Vol 40-41 ◽  
pp. 786-787
Author(s):  
Baozhu Luo ◽  
Jiaqi Yu ◽  
Guozhu Zhong
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
The Impact

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

1990 ◽  
Vol 57 (3) ◽  
pp. 249-251 ◽  
Author(s):  
H. Kuwatsuka ◽  
T. Mikawa ◽  
S. Miura ◽  
N. Yasuoka ◽  
Y. Kito ◽  
...  
Keyword(s):  
Impact Ionization ◽  
The Impact ◽  
Ionization Rates

Environmental tests of embedded thin- and thick-film resistors in comparison to chip resistors

Circuit World ◽  
2014 ◽  
Vol 40 (1) ◽  
pp. 7-12 ◽  
Author(s):  
Wojciech Steplewski ◽  
Andrzej Dziedzic ◽  
Janusz Borecki ◽  
Grazyna Koziol ◽  
Tomasz Serzysko
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Electrical Resistance ◽  
Printed Circuit Boards ◽  
Base Material ◽  
Forming Process ◽  
Content Type ◽  
Thin Film Resistors ◽  
Embedded Resistors ◽  
The Impact

Purpose – The purpose of this paper is to investigate the influence of parameters of embedded resistive elements manufacturing process as well as the influence of environmental factors on their electrical resistance. The investigations were made in comparison to the similar constructions of discrete chip resistors assembled to standard printed circuit boards (PCBs). Design/methodology/approach – The investigations were based on the thin-film resistors made of NiP alloy, thick-film resistors made of carbon or carbon-silver inks as well as chip resistors in 0402 and 0603 packages. The polymer thick-film resistive films were screen-printed on the several types finishing materials of contact terminations such as copper, silver, and gold. To determine the sensitivity of embedded resistors versus standard assembled chip resistors on environmental exposure, the climatic chamber was used. The measurements of resistance were carried out periodically during the tests, and after the exposure cycles. Findings – The results show that the change of electrical resistance of embedded resistors, in dependence of construction and base material, is different and mainly not exceed the range of 3 per cent. The achieved results in reference to thin-film resistors are comparable with results for standard chip resistors. However, the results that were obtained for thick-film resistors with Ag and Ni/Au contacts are similar. It was not found the big differences between resistors with and without conformal coating. Research limitations/implications – The studies show that embedded resistors can be used interchangeably with chip resistors. It allows to save the area on the surface of PCB, occupied by these passive elements, for assembly of active elements (ICs) and thus enable to miniaturization of electronic devices. But embedding of passive elements into PCB requires to tackle the effect of each forming process steps on the operational properties. Originality/value – The technique of passive elements embedding into PCB is generally known; however, there are no detailed reports on the impact of individual process steps and environmental conditions on the stability of their electrical resistance. The studies allow to understand the importance of each factor process and the mechanisms of operational properties changes depending on the used materials.

The Impact of Contact Position on the Retention Performance in Thin Film Ferroelectric Transistors

2021 ◽  
Author(s):  
Qiusong Chen ◽  
Dong Lin ◽  
Qinhao Wang ◽  
Jiang Yang ◽  
Juan E. Sanchez ◽  
...  
Keyword(s):  
Thin Film ◽  
Retention Performance ◽  
Contact Position ◽  
The Impact

Pulsed Laser Deposition History and Laser-Target Interactions

MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 30-36 ◽  
Author(s):  
Jeff Cheung ◽  
Jim Horwitz
Keyword(s):  
Thin Film ◽  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Mechanical Energy ◽  
Pulsed Laser ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Deposition ◽  
Small Branch ◽  
The Impact

The laser, as a source of “pure” energy in the form of monochromatic and coherent photons, is enjoying ever increasing popularity in diverse and broad applications from drilling micron-sized holes on semiconductor devices to guidance systems used in drilling a mammoth tunnel under the English Channel. In many areas such as metallurgy, medical technology, and the electronics industry, it has become an irreplaceable tool.Like many other discoveries, the various applications of the laser were not initially defined but were consequences of natural evolution led by theoretical studies. Shortly after the demonstration of the first laser, the most intensely studied theoretical topics dealt with laser beam-solid interactions. Experiments were undertaken to verify different theoretical models for this process. Later, these experiments became the pillars of many applications. Figure 1 illustrates the history of laser development from its initial discovery to practical applications. In this tree of evolution, Pulsed Laser Deposition (PLD) is only a small branch. It remained relatively obscure for a long time. Only in the last few years has his branch started to blossom and bear fruits in thin film deposition.Conceptually and experimentally, PLD is extremely simple, probably the simplest among all thin film growth techniques. Figure 2 shows a schematic diagram of this technique. It uses pulsed laser radiation to vaporize materials and to deposit thin films in a vacuum chamber. However, the beam-solid interaction that leads to evaporation/ablation is a very complex physical phenomenon. The theoretical description of the mechanism is multidisciplinary and combines equilibrium and nonequilibrium processes. The impact of a laser beam on the surface of a solid material, electromagnetic energy is converted first into electronic excitation and then into thermal, chemical, and even mechanical energy to cause evaporation, ablation, excitation, and plasma formation.

Separating the impact of oxygen and water on the long-term stability of n-channel perylene diimide thin-film transistors

2015 ◽  
Vol 26 ◽  
pp. 340-344 ◽  
Author(s):  
Ute Zschieschang ◽  
Konstantin Amsharov ◽  
Martin Jansen ◽  
Klaus Kern ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Perylene Diimide ◽  
Term Stability ◽  
Long Term Stability ◽  
The Impact
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