scholarly journals High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

2009 ◽  
Vol 56 (3) ◽  
pp. 499-504 ◽  
Author(s):  
Muhammad Khaled Husain ◽  
Xiaoli V. Li ◽  
Cornelis Hendrik de Groot
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Leakage Currents ◽  
High Quality

Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)

2013 ◽  
Vol 53 (2) ◽  
pp. 171-176 ◽  
Author(s):  
W. Ahn ◽  
O. Seok ◽  
M.-W. Ha ◽  
Y.-S. Kim ◽  
M.-K. Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

2013 ◽  
Vol 740-742 ◽  
pp. 881-886 ◽  
Author(s):  
Hiroyuki Okino ◽  
Norifumi Kameshiro ◽  
Kumiko Konishi ◽  
Naomi Inada ◽  
Kazuhiro Mochizuki ◽  
...  
Keyword(s):  
Electric Field ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Current ◽  
Tunneling Current ◽  
Leakage Currents ◽  
Reverse Leakage Current ◽  
Low Leakage ◽  
Chip Size ◽  
Barrier Metal

The reduction of reverse leakage currents was attempted to fabricate 4H-SiC diodes with large current capacity for high voltage applications. Firstly diodes with Schottky metal of titanium (Ti) with active areas of 2.6 mm2 were fabricated to investigate the mechanisms of reverse leakage currents. The reverse current of a Ti Schottky barrier diode (SBD) is well explained by the tunneling current through the Schottky barrier. Then, the effects of Schottky barrier height and electric field on the reverse currents were investigated. The high Schottky barrier metal of nickel (Ni) effectively reduced the reverse leakage current to 2 x 10-3 times that of the Ti SBD. The suppression of the electric field at the Schottky junction by applying a junction barrier Schottky (JBS) structure reduced the reverse leakage current to 10-2 times that of the Ni SBD. JBS structure with high Schottky barrier metal of Ni was applied to fabricate large chip-size SiC diodes and we achieved 30 A- and 75 A-diodes with low leakage current and high breakdown voltage of 4 kV.

Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties

2018 ◽  
Vol 461 ◽  
pp. 276-280 ◽  
Author(s):  
B. Zaťko ◽  
L. Hrubčín ◽  
A. Šagátová ◽  
J. Osvald ◽  
P. Boháček ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Quality ◽  
Barrier Detectors

Temperature-dependent Schottky barrier characteristics of Cu∕Au Schottky contacts to n-InP

2011 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy ◽  
S. K. Tripathi ◽  
Keya Dharamvir ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Temperature Dependent

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

Sign in / Sign up

Export Citation Format

Share Document