Temperature-dependent Schottky barrier characteristics of Cu∕Au Schottky contacts to n-InP

2011 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy ◽  
S. K. Tripathi ◽  
Keya Dharamvir ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Temperature Dependent

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe

2008 ◽  
Vol 23 (10) ◽  
pp. 105005 ◽  
Author(s):  
X L Zhang ◽  
W G Sun ◽  
L Zhang ◽  
Z X Lu
Keyword(s):  
Schottky Contacts ◽  
Temperature Dependent

Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)

2013 ◽  
Vol 53 (2) ◽  
pp. 171-176 ◽  
Author(s):  
W. Ahn ◽  
O. Seok ◽  
M.-W. Ha ◽  
Y.-S. Kim ◽  
M.-K. Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Schottky Barrier Diodes

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

scholarly journals High-Quality Schottky Contacts for Limiting Leakage Currents in Ge-Based Schottky Barrier MOSFETs

2009 ◽  
Vol 56 (3) ◽  
pp. 499-504 ◽  
Author(s):  
Muhammad Khaled Husain ◽  
Xiaoli V. Li ◽  
Cornelis Hendrik de Groot
Keyword(s):  
Schottky Barrier ◽  
Schottky Contacts ◽  
Leakage Currents ◽  
High Quality

Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3($\bar 201$)-Al2O3-Si Substrate

2020 ◽  
Vol 54 (3) ◽  
pp. 034004
Author(s):  
Yibo Wang ◽  
Wenhui Xu ◽  
Genquan Han ◽  
Tiangui You ◽  
Fengwen Mu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Si Substrate ◽  
Temperature Dependent
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