An Analytical Model for the Threshold Voltage Shift Caused by Two-Dimensional Quantum Confinement in Undoped Multiple-Gate MOSFETs

2007 ◽  
Vol 54 (9) ◽  
pp. 2562-2565 ◽  
Author(s):  
R. Granzner ◽  
F. Schwierz ◽  
V.M. Polyakov
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Quantum Confinement ◽  
Two Dimensional ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Impact of Quantum Confinement on Stress-Induced nMOSFET Threshold Voltage Shift

2012 ◽  
Vol 59 (12) ◽  
pp. 3199-3204
Author(s):  
Hiroyuki Takashino ◽  
Motoaki Tanizawa ◽  
Takeshi Okagaki ◽  
Takashi Hayashi ◽  
Masatoshi Taya ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Quantum Confinement ◽  
Threshold Voltage Shift ◽  
Voltage Shift

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

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