Analytical model for threshold voltage shift due to impurity penetration through a thin gate oxide

1997 ◽  
Vol 44 (9) ◽  
pp. 1386-1392 ◽  
Author(s):  
K. Suzuki
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Thin Gate Oxide

Real-Time External Compensation of Threshold Voltage Shift Using Double-Gate Oxide TFTs in a Gate Driving System

2016 ◽  
Vol 12 (9) ◽  
pp. 892-897 ◽  
Author(s):  
Bong-Hyun You ◽  
Soo-Yeon Lee ◽  
Seok-Ha Hong ◽  
Jae-Hoon Lee ◽  
Hyun-Chang Kim ◽  
...  
Keyword(s):  
Real Time ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Double Gate ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Driving System ◽  
Oxide Tfts ◽  
Gate Driving

Impact of Carbon on Threshold Voltage Shift in MOSFET Studied by 3D Atom Probe Tomography

2017 ◽  
Author(s):  
Ju-Heon Kim ◽  
Euna Ok ◽  
Hyunmi Sim ◽  
Dongkeun Na ◽  
Ho Seok Song ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Atom Probe Tomography ◽  
Analytical Techniques ◽  
Gate Oxide ◽  
Atom Probe ◽  
Single Atom ◽  
Device Performance ◽  
Si Substrate ◽  
Threshold Voltage Shift ◽  
Voltage Shift

Abstract In this paper, impact of carbon on threshold voltage in MOSFET-based device is studied by 3D-atom probe tomography (APT). Carbon is one of most difficult contaminants incorporated from fab-environment to be detected by typical analytical techniques such as TEM-EDS or SIMS. Here, we successfully demonstrated the detection of carbon segregated at gate oxide/Si substrate interface using 3D-APT with single-atom sensitivity and sub-nanometer spatial resolution. It was found that the carbon contaminants have significant effect on the threshold voltage shift (ΔVth), in which ΔVth increases slightly with increasing carbon concentration. The deterioration of device performance is explained by means of which the positively ionized carbons at the interface acting as additional positive charges affecting the inversion to n-channel.

Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

2014 ◽  
Author(s):  
J. Hasegawa ◽  
M. Noguchi ◽  
M. Furuhashi ◽  
S. Nakata ◽  
T. Iwasaki ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Oxide ◽  
Threshold Voltage Shift ◽  
Voltage Shift

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

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