Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures

2007 ◽  
Vol 54 (5) ◽  
pp. 1249-1252 ◽  
Author(s):  
Tsutomu Tezuka ◽  
Shu Nakaharai ◽  
Yoshihiko Moriyama ◽  
Norio Hirashita ◽  
Naoharu Sugiyama ◽  
...  
Keyword(s):  
High Temperatures ◽  
Hole Mobility ◽  
Strained Sige

Hole mobility enhancement in uniaxially strained SiGe FINFETs: Analysis and prospects

2011 ◽  
Author(s):  
R. Bijesh ◽  
I. Ok ◽  
M. Baykan ◽  
C. Hobbs ◽  
P. Majhi ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Strained Sige

Correlated Flicker Noise and Hole Mobility Characteristics of $(\hbox{110})/\langle\hbox{110}\rangle$ Uniaxially Strained SiGe FINFETs

2012 ◽  
Vol 33 (9) ◽  
pp. 1237-1239 ◽  
Author(s):  
Bijesh Rajamohanan ◽  
Injo Ok ◽  
Salil Mujumdar ◽  
Chris Hobbs ◽  
Prashant Majhi ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Hole Mobility ◽  
Strained Sige

Hole Mobility Enhancement in Strained SiGe Grown on Silicon-on-Insulator p-MOSFETs

2008 ◽  
Vol 53 (4) ◽  
pp. 2171-2174 ◽  
Author(s):  
Seong-Je Kim ◽  
Ji-Young Baek ◽  
Tae-Hun Shim ◽  
Hun-Joo Lee ◽  
Jea-Gun Park ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Silicon On Insulator ◽  
Strained Sige

Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)

2004 ◽  
Vol 19 (5) ◽  
pp. L48-L51 ◽  
Author(s):  
Zhiyuan Cheng ◽  
Jongwan Jung ◽  
Minjoo L Lee ◽  
Arthur J Pitera ◽  
Judy L Hoyt ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Strained Si ◽  
Strained Sige

Hall Mobility in Strained SiGe p-Mosfets

1995 ◽  
Vol 379 ◽  
Author(s):  
L. Garchery ◽  
I. Sagnes ◽  
Y. Campidelli ◽  
M. Berenguer ◽  
P.A. Badoz ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Hall Mobility ◽  
Hole Mobility ◽  
Sige Layer ◽  
Cmos Integrated Circuits ◽  
Surface Scattering ◽  
Limiting Factors ◽  
Mos Transistors ◽  
Strained Sige

One of the limiting factors in the performance of future CMOS integrated circuits is the low hole mobility which causes the transconductance of p-channel transistors to be inferior to those of n-channel devices. One promising way of enhancing hole mobility is to introduce a buried SiGe layer under the gate of p-MOS transistors. The mobility improvement thus results from, i) reduction in surface scattering (by moving carriers away from scattering sites at the Si/SiO2 interface), and ii) higher in-plane hole mobility in biaxally strained SiGe layers.

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