X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures

1997 ◽  
Author(s):  
Peter Zaumseil ◽  
G. G. Fischer ◽  
Andrzej Misiuk
Keyword(s):  
Hydrostatic Pressure ◽  
High Temperatures ◽  
Diffusion Behavior ◽  
X Ray ◽  
Title X ◽  
And Diffusion ◽  
Strained Sige

X-ray polarimetry and position measurements using the photoeffect and diffusion in a CCD

1996 ◽  
Author(s):  
Klaus H. Schmidt ◽  
Gerd W. Buschhorn ◽  
Rainer Kotthaus ◽  
Matthias Rzepka ◽  
Peter M. Weinmann
Keyword(s):  
X Ray ◽  
Title X ◽  
And Diffusion

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

Sorption and diffusion behavior of actinium(iii) ions in contact with hydroxyapatite as a transporter of medical radionuclides

2020 ◽  
Vol 69 (12) ◽  
pp. 2286-2293
Author(s):  
A. V. Severin ◽  
A. N. Vasiliev ◽  
A. V. Gopin ◽  
K. I. Enikeev
Keyword(s):  
Diffusion Behavior ◽  
And Diffusion ◽  
Medical Radionuclides

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Corrosion Behaviours of Mo Modified Ti6Al4V Alloy in Hank’s Solution

2009 ◽  
Vol 610-613 ◽  
pp. 1150-1154
Author(s):  
Ai Lan Fan ◽  
Cheng Gang Zhi ◽  
Lin Hai Tian ◽  
Lin Qin ◽  
Bin Tang
Keyword(s):  
Electrochemical Corrosion ◽  
Optical Emission ◽  
Ti6al4v Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Layers ◽  
Modified Layer ◽  
Surface Modified ◽  
Hank’S Solution ◽  
And Diffusion

The Mo surface modified layer on Ti6Al4V alloy was obtained by the plasma surface alloying technique. The structure and composition of the Mo modified Ti6Al4V alloy was investigated by X-ray diffraction (XRD) and glow discharge optical emission spectroscopy (GDOES). The Mo modified layer contains Mo coating on subsurface and diffusion layers between the subsurface and substrate. The X- ray diffraction analysis of the Mo modified Ti6Al4V alloy reveals that the outmost surface of the Mo modified Ti6Al4V alloy is composed of pure Mo. The electrochemical corrosion performance of the Mo modified Ti6Al4V alloy in 25°C Hank’s solution was investigated and compared with that of Ti6Al4V alloy. Results indicate that the self-corroding electric potential and the corrosion-rate of the Mo modified Ti6Al4V alloy are higher than that of Ti6Al4V alloy in 25°C Hank’s solution.

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

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