A new extraction method of SiC power MOSFET threshold voltage using a physical approach

2017 ◽  
Author(s):  
Wadia Jouha ◽  
Ahmed El Oualkadi ◽  
Pascal Dherbecourt ◽  
Eric Joubert ◽  
Mohamed Masmoudi
Keyword(s):  
Threshold Voltage ◽  
Extraction Method ◽  
Power Mosfet ◽  
Physical Approach

The Effects of Double-Epilayer Structure on Threshold Voltage of Ultralow Voltage Trench Power MOSFET Devices

2007 ◽  
Vol 54 (4) ◽  
pp. 833-839 ◽  
Author(s):  
Qi Wang ◽  
Minhua Li ◽  
Joelle Sharp ◽  
Ashok Challa
Keyword(s):  
Threshold Voltage ◽  
Power Mosfet

scholarly journals Self-Cascode Current-Voltage Curve-Construction Algorithm from Single MOSFET Measurements for Analog Figures-of-Merit Extraction

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Li�gia Martins d'Oliveira ◽  
Valeriya Kilchytska ◽  
Denis Flandre ◽  
Michelly De Souza
Keyword(s):  
Threshold Voltage ◽  
Extraction Method ◽  
New Technologies ◽  
Experimental Measurements ◽  
Saturation Regime ◽  
Figures Of Merit ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve ◽  
Self Cascode

This paper proposes a curve extraction method for I-V curves and analog figures-of-merit of self-cascode MOSFET associations (SC) using a code that exploits I-V curves of single transistors as input. The method was validated by using experimental measurements of fabricated SC and the very single transistors that compose them. The results indicate a very low error between the SC generated by the code and the measured reference for operation in saturation regime and above threshold voltage, for both the I-V curves and their derivatives. This method is then valid for the assessment of the SC structures in new technologies, avoiding experimental dedicated layouts or complex set-ups.

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

2018 ◽  
Vol 33 (11) ◽  
pp. 9130-9133 ◽  
Author(s):  
Wadia Jouha ◽  
Ahmed El Oualkadi ◽  
Pascal Dherbecourt ◽  
Eric Joubert ◽  
Mohamed Masmoudi
Keyword(s):  
Silicon Carbide ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Power Mosfet ◽  
Marquardt Algorithm ◽  
Levenberg Marquardt

(Invited) Effect of Threshold-Voltage Instability on SiC Power MOSFET High-Temperature Reliability

2019 ◽  
Vol 41 (8) ◽  
pp. 203-214 ◽  
Author(s):  
Aivars Lelis ◽  
Ronald Green ◽  
Daniel Habersat
Keyword(s):  
High Temperature ◽  
Threshold Voltage ◽  
Power Mosfet ◽  
Voltage Instability

scholarly journals A Physics-Oriented Parameter Extraction Method for MOSFET Libraries Generation

2016 ◽  
Vol 11 (2) ◽  
pp. 121-131
Author(s):  
Lester De Abreu Faria ◽  
Roberto D'Amore
Keyword(s):  
Extraction Method ◽  
New Technologies ◽  
Parameter Extraction ◽  
Harsh Environments ◽  
Cryogenic Temperatures ◽  
Physical Approach ◽  
Fitting Procedures ◽  
Novel Method ◽  
Operating Regions

A novel method for MOSFET parameter extraction based on EKV 2.6 model is presented. The proposed method improves and updates the previous ones found in literature, since it describes setups and equations for the extraction of intrinsic DC parameters, not requiring any fitting procedures or optimization steps, as demanded by the previous ones. The physical approach used in the analysis allowed the achievement of these features, leading to the generation of libraries valid in all operating regions. Due to this approach, the method can be applied to new technologies or to harsh environments (such as cryogenic temperatures), where commercial libraries are not yet available. Validations of the method were done with data extracted from BSIM3v3 simulated curves, at room temperatures, and with experimental curves of an AMS 0.35μm transistor at 77K. In both cases, the EKV 2.6 generated libraries were able to reproduce the transistors behavior with errors less than 6%.

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