High breakdown voltage GaN HFET with field plate

J. Li; S.J. Cai; G.Z. Pan; Y.L. Chen; C.P. Wen; K.L. Wang

doi:10.1049/el:20010091

High breakdown voltage GaN HFET with field plate

Electronics Letters ◽

10.1049/el:20010091 ◽

2001 ◽

Vol 37 (3) ◽

pp. 196 ◽

Cited By ~ 32

Author(s):

J. Li ◽

S.J. Cai ◽

G.Z. Pan ◽

Y.L. Chen ◽

C.P. Wen ◽

...

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hfet

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Advanced design of AlGaN/GaN HEMTs employing mesa field plate for high breakdown voltage

9th International Seminar on Power Semiconductors (ISPS 2008) ◽

10.1049/ic:20080190 ◽

2008 ◽

Author(s):

Kyu-Heon Cho ◽

Young-Hwan Choi ◽

Jiyong Lim ◽

Young-Shil Kim ◽

Min-Koo Han

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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Design and Demonstration of High Breakdown Voltage GaN High Electron Mobility Transistor (HEMT) Using Field Plate Structure for Power Electronics Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.2239 ◽

2004 ◽

Vol 43 (4B) ◽

pp. 2239-2242 ◽

Cited By ~ 24

Author(s):

Wataru Saito ◽

Yoshiharu Takada ◽

Masahiko Kuraguchi ◽

Kunio Tsuda ◽

Ichiro Omura ◽

...

Keyword(s):

Power Electronics ◽

Breakdown Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Plate Structure ◽

Field Plate ◽

High Breakdown Voltage

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High Temperature Operation AlGaN/GaN HFET with a low on-state resistance, a high breakdown voltage and a fast switching capacity

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666134 ◽

2006 ◽

Cited By ~ 9

Author(s):

T. Nomura ◽

H. Kambayashi ◽

M. Masuda ◽

S. Ishii ◽

N. Ikeda ◽

...

Keyword(s):

High Temperature ◽

Breakdown Voltage ◽

Fast Switching ◽

High Breakdown Voltage ◽

Gan Hfet ◽

High Temperature Operation ◽

State Resistance

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High breakdown voltage (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs quasi-enhancement-mode pHEMT with field-plate technology

IEEE Electron Device Letters ◽

10.1109/led.2005.855403 ◽

2005 ◽

Vol 26 (10) ◽

pp. 701-703 ◽

Cited By ~ 6

Author(s):

Hsien-Chin Chiu ◽

Yi-Chyun Chiang ◽

Chan-Shin Wu

Keyword(s):

Breakdown Voltage ◽

Field Plate ◽

Enhancement Mode ◽

High Breakdown Voltage

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Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ◽

10.1109/icsict.2010.5667651 ◽

2010 ◽

Author(s):

Minglan Zhang ◽

Xiaoliang Wang ◽

Mingzeng Peng ◽

Xinyu Liu ◽

Ru Wang

Keyword(s):

Breakdown Voltage ◽

Power Switching ◽

Field Plate ◽

High Breakdown Voltage ◽

Plate Length ◽

Dc Characteristics ◽

Gan Hemts

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Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

Applied Physics Letters ◽

10.1063/5.0074453 ◽

2021 ◽

Vol 119 (25) ◽

pp. 252101

Author(s):

Zhiwen Liang ◽

Hanghai Du ◽

Ye Yuan ◽

Qi Wang ◽

Junjie Kang ◽

...

Keyword(s):

Breakdown Voltage ◽

Sapphire Substrates ◽

High Breakdown Voltage ◽

Gan Hfet

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Passivation-layer thickness and field-plate optimization to obtain high breakdown voltage in AlGaN/GaN HEMTs with short gate-to-drain distance

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114153 ◽

2021 ◽

Vol 121 ◽

pp. 114153

Author(s):

Takuma Iwamoto ◽

Seiya Akiyama ◽

Kazushige Horio

Keyword(s):

Layer Thickness ◽

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

High Breakdown Voltage ◽

Gan Hemts

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High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse

2008 20th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.2008.4538955 ◽

2008 ◽

Cited By ~ 73

Author(s):

Nariaki Ikeda ◽

Syuusuke Kaya ◽

Jiang Li ◽

Yoshihiro Sato ◽

Sadahiro Kato ◽

...

Keyword(s):

Breakdown Voltage ◽

High Power ◽

Si Substrates ◽

High Breakdown Voltage ◽

Current Collapse ◽

Gan Hfet

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High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.028007 ◽

2013 ◽

Vol 52 (2R) ◽

pp. 028007 ◽

Cited By ~ 62

Author(s):

Yoshitomo Hatakeyama ◽

Kazuki Nomoto ◽

Akihisa Terano ◽

Naoki Kaneda ◽

Tadayoshi Tsuchiya ◽

...

Keyword(s):

Breakdown Voltage ◽

Free Standing ◽

Field Plate ◽

High Breakdown Voltage ◽

Damage Field

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High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.885532 ◽

2006 ◽

Vol 53 (12) ◽

pp. 2908-2913 ◽

Cited By ~ 23

Author(s):

Takehiko Nomura ◽

Hiroshi Kambayashi ◽

Mitsuru Masuda ◽

Sonomi Ishii ◽

Nariaki Ikeda ◽

...

Keyword(s):

High Temperature ◽

Breakdown Voltage ◽

Fast Switching ◽

High Breakdown Voltage ◽

Gan Hfet ◽

High Temperature Operation ◽

State Resistance

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