The Multivalley Effective Conduction Band-Edge Method for Monte Carlo Simulation of Nanoscale Structures

2006 ◽  
Vol 53 (11) ◽  
pp. 2703-2710 ◽  
Author(s):  
C. Sampedro-Matarin ◽  
F. Gamiz ◽  
A. Godoy ◽  
F.J.G. Ruiz
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Nanoscale Structures ◽  
Edge Method ◽  
Effective Conduction Band Edge

scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

Size-Dependent Valence and Conduction Band-Edge Energies of Semiconductor Nanocrystals

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 5888-5902 ◽  
Author(s):  
Jacek Jasieniak ◽  
Marco Califano ◽  
Scott E. Watkins
Keyword(s):  
Conduction Band ◽  
Semiconductor Nanocrystals ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Size Dependent

scholarly journals Photocatalytic properties of a new Z-scheme system BaTiO3/In2S3 with a core–shell structure

RSC Advances ◽  
2019 ◽  
Vol 9 (20) ◽  
pp. 11377-11384 ◽  
Author(s):  
Kaili Wei ◽  
Baolai Wang ◽  
Jiamin Hu ◽  
Fuming Chen ◽  
Qing Hao ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Valence Band ◽  
Conduction Band ◽  
Shell Structure ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Core Shell ◽  
Valence Band Edge ◽  
Core Shell Structure ◽  
Positive Valence

It's highly desired to design an effective Z-scheme photocatalyst with excellent charge transfer and separation, a more negative conduction band edge (ECB) than O2/·O2− (−0.33 eV) and a more positive valence band edge (EVB) than ·OH/OH− (+2.27 eV).

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