scholarly journals Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 822
Author(s):  
Hyo-Jun Joo ◽  
Dae-Hwan Kim ◽  
Hyun-Seok Cha ◽  
Sang-Hun Song
Keyword(s):  
Magnetic Field ◽  
Electron Density ◽  
Conduction Band ◽  
Electron System ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Offset Voltage ◽  
Three Samples ◽  
Dimensional Electron System ◽  
Longitudinal Distance

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

scholarly journals Conduction-band edge and Shubnikov–de Haas effect in low-electron-density SrTiO3

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
S. James Allen ◽  
Bharat Jalan ◽  
SungBin Lee ◽  
Daniel G. Ouellette ◽  
Guru Khalsa ◽  
...  
Keyword(s):  
Electron Density ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Haas Effect

Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge

2014 ◽  
Vol 778-780 ◽  
pp. 424-427
Author(s):  
Tetsuo Hatakeyama ◽  
Mitsuru Sometani ◽  
Kenji Fukuda ◽  
Hajime Okumura ◽  
Tsunenobu Kimoto
Keyword(s):  
Electron Density ◽  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Interface States ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Capture Process ◽  
Oxide Trap ◽  
Transient Spectroscopy

Constant-capacitance deep-level transient spectroscopy was carried out to characterize in detail interface states close to the conduction band edge in SiO2/SiC structures. The measured results are summarized as follows: (1) The capture of electrons by the interface states proceeds logarithmically with time. (2) The emission of electrons accelerates slightly with increasing density of captured electrons. The oxide trap model explains the logarithmic change in capture with time but not the phenomenon of accelerated emissions. This prompted us to formulate a new model that replicates the logarithmic capture process with time. In this model, we postulated the electron density at the interface decreases exponentially as the trapped electron density increases owing to the interaction between the trapped electrons and the free electrons. In this case, the capture process is almost the same as with the oxide trap model except for the definition of parameters. Further, we do not need to take into account the delay of the emission process caused by tunneling. The phenomenon of accelerated emissions may be explained by interactions among captured electrons in this model.

Magnetic-field-induced dispersion anisotropy of intersubband excitations in an asymmetrical quasi-two-dimensional electron system

2000 ◽  
Vol 61 (3) ◽  
pp. 1712-1715 ◽  
Author(s):  
L. V. Kulik ◽  
I. V. Kukushkin ◽  
V. E. Kirpichev ◽  
K. v. Klitzing ◽  
K. Eberl
Keyword(s):  
Magnetic Field ◽  
Electron System ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Dimensional Electron System

Size-Dependent Valence and Conduction Band-Edge Energies of Semiconductor Nanocrystals

ACS Nano ◽  
2011 ◽  
Vol 5 (7) ◽  
pp. 5888-5902 ◽  
Author(s):  
Jacek Jasieniak ◽  
Marco Califano ◽  
Scott E. Watkins
Keyword(s):  
Conduction Band ◽  
Semiconductor Nanocrystals ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Size Dependent
Sign in / Sign up

Export Citation Format

Share Document