Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

2006 ◽  
Vol 53 (3) ◽  
pp. 573-577 ◽  
Author(s):  
P. Gaucci ◽  
A. Valletta ◽  
L. Mariucci ◽  
G. Fortunato ◽  
S.D. Brotherton
Keyword(s):  
Numerical Simulation ◽  
Polycrystalline Silicon ◽  
Parasitic Resistance

scholarly journals A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain

2003 ◽  
Vol 24 (8) ◽  
pp. 509-511 ◽  
Author(s):  
Hsiao-Wen Zan ◽  
Ting-Chang Chang ◽  
Po-Sheng Shih ◽  
Du-Zen Peng ◽  
Po-Yi Kuo ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Parasitic Resistance ◽  
Thin Channel

Numerical simulation of polycrystalline-Silicon MOSFET's

1986 ◽  
Vol 33 (8) ◽  
pp. 1201-1206 ◽  
Author(s):  
R. Guerrieri ◽  
P. Ciampolini ◽  
A. Gnudi ◽  
M. Rudan ◽  
G. Baccarani
Keyword(s):  
Numerical Simulation ◽  
Polycrystalline Silicon

Novel Low VON Poly-Si/4H-SiC Heterojunction Diode Using Energy Barrier Height Control

2012 ◽  
Vol 717-720 ◽  
pp. 1005-1008 ◽  
Author(s):  
Shigeharu Yamagami ◽  
Tetsuya Hayashi ◽  
Masakatsu Hoshi
Keyword(s):  
Numerical Simulation ◽  
Barrier Height ◽  
Energy Barrier ◽  
Polycrystalline Silicon ◽  
Implantation Dose ◽  
Heterojunction Diode ◽  
Reverse Voltage ◽  
Height Control ◽  
Boron Doped ◽  
Wide Range

We experimentally investigated a method of controlling the energy barrier height (ΦB) of polycrystalline silicon (poly-Si)/4H-SiC heterojunction diodes (HJDs) and conducted a numerical simulation of a novel low Von and low reverse recovery current diode using ΦB control. The ΦB of the HJD with arsenic-doped n+-poly-Si was 0.79 eV and that of the HJD with boron-doped p+-poly-Si was 1.59 eV. The ΦB can be controlled over a wide range by varying the dopant and ion implantation dose of poly-Si. A novel merged HJD (M-HJD) with two different ΦB values obtained by using ΦB control is also presented. The numerical simulation results show that the M-HJD reduces Von without increasing reverse leakage current at high reverse voltage.

Novel Poly-Si/GaN Vertical Heterojunction Diode

2015 ◽  
Vol 821-823 ◽  
pp. 1015-1018
Author(s):  
Kenta Emori ◽  
Toshiharu Marui ◽  
Yuji Saito ◽  
Wei Ni ◽  
Yasushi Nakajima ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Barrier Height ◽  
Epitaxial Layer ◽  
Ideality Factor ◽  
Polycrystalline Silicon ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Heterojunction Diode ◽  
Bulk Gan ◽  
P Type

We previously reported a unipolar mode p+-polycrystalline silicon (poly-Si)/4H-SiC heterojunction diode (SiC-HJD) [1-3]. In this work, we demonstrate a poly-Si/GaN vertical unipolar heterojunction diode (GaN-HJD) based on numerical simulation and experimental results. The GaN-HJD is expected to control the electrical characteristics of both Schottky action with a p-type poly-Si and ohmic action with an n-type poly-Si. We investigated the detailed physics of the GaN-HJD between p+Si and n+Si by numerical simulation. The GaN-HJD was also fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer on bulk GaN substrates. The measured barrier height of the GaN-HJD was 0.79 eV and the ideality factor was 1.10.

Numerical Simulation of Thermal Distribution during the Directional Solidification of Polycrystalline Silicon Ingot

2019 ◽  
Vol 18 (1) ◽  
pp. 1043-1047
Author(s):  
Dan Wu ◽  
Weizhong Sun ◽  
Qiuyan Hao ◽  
Jianguo Zhao ◽  
Caichi Liu
Keyword(s):  
Numerical Simulation ◽  
Directional Solidification ◽  
Polycrystalline Silicon ◽  
Silicon Ingot ◽  
Thermal Distribution
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