NUMERICAL SIMULATION OF HEAT TRANSFER IN DIRECTIONAL SOLIDIFICATION PROCESS FOR POLYCRYSTALLINE SILICON

2011 ◽  
Vol 10 (6) ◽  
pp. 733-737
Author(s):  
Wenhui Ma ◽  
Guoqiang Lv ◽  
Hua Wang ◽  
Xiangyang Mei ◽  
Kuixian Wei
Keyword(s):  
Heat Transfer ◽  
Numerical Simulation ◽  
Directional Solidification ◽  
Polycrystalline Silicon ◽  
Solidification Process ◽  
Directional Solidification Process

The Numerical Simulation of Directional Solidification Process Temperature Field for Large-Scale Frustum of a Cone Ingot

2011 ◽  
Vol 189-193 ◽  
pp. 1476-1481
Author(s):  
Kun Liu ◽  
Zhe Wang ◽  
Ren Zhi Han ◽  
Zi Ping Ren
Keyword(s):  
Numerical Simulation ◽  
Mathematical Model ◽  
Temperature Field ◽  
Directional Solidification ◽  
Large Scale ◽  
Solidification Process ◽  
Directional Solidification Process ◽  
Ingot Quality ◽  
Fluent Software ◽  
The Mathematical Model

By using Fluent software, the mathematical model of temperature field is established on directional solidification process for large-scale frustum of a cone ingot, and the result is analyzed by Origin software, Tecplot. The influences of different width/thickness ratio to directional solidification process of cone ingot are discussed in order to provide basis for design optimization and ingot quality improvement.

scholarly journals Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

2016 ◽  
Vol 2016 ◽  
pp. 1-9 ◽  
Author(s):  
Zaoyang Li ◽  
Lijun Liu ◽  
Yunfeng Zhang ◽  
Genshu Zhou
Keyword(s):  
Heat Transfer ◽  
Thermal Conductivity ◽  
Crystal Growth ◽  
Directional Solidification ◽  
Silicon Crystal ◽  
Solidification Process ◽  
Interface Shape ◽  
Directional Solidification Process ◽  
Reasonable Range ◽  
Crystal Interface

We carried out transient global simulations of heating, melting, growing, annealing, and cooling stages for an industrial directional solidification (DS) process for silicon ingots. The crucible thermal conductivity is varied in a reasonable range to investigate its influence on the global heat transfer and silicon crystal growth. It is found that the crucible plays an important role in heat transfer, and therefore its thermal conductivity can influence the crystal growth significantly in the entire DS process. Increasing the crucible thermal conductivity can shorten the time for melting of silicon feedstock and growing of silicon crystal significantly, and therefore large thermal conductivity is helpful in saving both production time and power energy. However, the high temperature gradient in the silicon ingots and the locally concave melt-crystal interface shape for large crucible thermal conductivity indicate that high thermal stress and dislocation propagation are likely to occur during both growing and annealing stages. Based on the numerical simulations, some discussions on designing and choosing the crucible thermal conductivity are presented.

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