Fabrication and Characterization of High Current Gain<tex>$(beta =430)$</tex>and High Power (23 A–500 V) 4H-SiC Hybrid Darlington Bipolar Transistor

2004 ◽  
Vol 51 (12) ◽  
pp. 2211-2216 ◽  
Author(s):  
Y. Luo ◽  
J. Zhang ◽  
P. Alexandrov ◽  
L. Fursin ◽  
J.H. Zhao
Keyword(s):  
High Power ◽  
Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Fabrication And Characterization

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

2008 ◽  
Vol 55 (8) ◽  
pp. 1899-1906 ◽  
Author(s):  
Jianhui Zhang ◽  
Xueqing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Xiaohui Wang ◽  
...  
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Fabrication And Characterization

Fabrication and Characterization of 4H-SiC 6kV Gate Turn-Off Thyristor

2012 ◽  
Vol 717-720 ◽  
pp. 1163-1166 ◽  
Author(s):  
Lei Lin ◽  
Jian Hui Zhao
Keyword(s):  
High Current Density ◽  
High Current ◽  
Initial Pulse ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Pulse Testing ◽  
Blocking Voltage ◽  
Fabrication And Characterization

In this paper, we report a 0.1cm2 4H-SiC gate-turn-off (GTO) thyristor with 6 kV blocking voltage fabricated on a structure with a 60µm blocking layer. A relatively large area, high voltage 4H-SiC GTO that exhibits encouraging characteristic at the on- and off-states, and a low leakage current with 63% devices blocking 3kV or higher. Initial pulse testing result shows that the fabricated GTOs are capable of both high current density and high turn-off speed.

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