A High Current Gain Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs

2006 ◽  
Author(s):  
M.J. Kumar ◽  
S. Nawal ◽  
S. Grover
Keyword(s):  
Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Horizontal Current

A Resonant-Tunneling Bipolar Transistor (RBT) -A New Functional Device with High Current Gain

1987 ◽  
Vol 26 (Part 2, No. 2) ◽  
pp. L131-L133 ◽  
Author(s):  
Toshiro Futatsugi ◽  
Yasuhiro Yamaguchi ◽  
Kenichi Imamura ◽  
Shunichi Muto ◽  
Naoki Yokoyama ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Bipolar Transistor ◽  
Current Gain ◽  
High Current

InGaAsP/InP Hetero Junction Bipolar Transistor with High Current Gain

1986 ◽  
Vol 25 (Part 2, No. 6) ◽  
pp. L504-L506 ◽  
Author(s):  
Hideki Fukano ◽  
Yoshio Itaya ◽  
George Motosugi
Keyword(s):  
Bipolar Transistor ◽  
Current Gain ◽  
High Current

Lateral npn bipolar transistor for high current gain applications at reduced temperatures

2003 ◽  
Author(s):  
J.C.S. Woo ◽  
S. Wong ◽  
S. Verdonckt-Vanderbroek ◽  
P. Ko ◽  
K. Terrill ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Current Gain ◽  
High Current

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

2008 ◽  
Vol 47-50 ◽  
pp. 383-386
Author(s):  
Jung Hui Tsai ◽  
Shao Yen Chiu ◽  
Wen Shiung Lour ◽  
Chien Ming Li ◽  
Yi Zhen Wu ◽  
...  
Keyword(s):  
Valence Band ◽  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Potential Spike ◽  
Emitter Junction ◽  
Valence Band Discontinuity

In this article, a novel InGaP/GaAs pnp δ-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a δ-doped sheet between two spacer layers at the emitter-base junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and an offset voltage of 100 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain

2021 ◽  
pp. 2106537
Author(s):  
Sanjun Yang ◽  
Lejing Pi ◽  
Liang Li ◽  
Kailang Liu ◽  
Ke Pei ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Double Heterojunction
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