The Role of the Mercury-Si Schottky-Barrier Height in<tex>$Psi$</tex>-MOSFETs

2004 ◽  
Vol 51 (7) ◽  
pp. 1164-1168 ◽  
Author(s):  
J.Y. Choi ◽  
S. Ahmed ◽  
T. Dimitrova ◽  
J.T.C. Chen ◽  
D.K. Schroder
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

2009 ◽  
Vol 56 (11) ◽  
pp. 2770-2777 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Alvin Tian-Yi Koh ◽  
Kian-Ming Tan ◽  
Tsung-Yang Liow ◽  
Dong Zhi Chi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Height Reduction

The Role of the Mercury-Si Schottky-Barrier Height in<tex>$Psi$</tex>-MOSFETs

2004 ◽  
Vol 51 (9) ◽  
pp. 1380-1384 ◽  
Author(s):  
J.Y. Choi ◽  
S. Ahmed ◽  
T. Dimitrova ◽  
J.T.C. Chen ◽  
D.K. Schroder
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height

Investigation of Platinum Silicide Schottky Barrier Height Modulation using a Dopant Segregation Approach

2008 ◽  
Vol 1070 ◽  
Author(s):  
Nicolas Breil ◽  
Aomar Halimaoui ◽  
Emmanuel Dubois ◽  
Evelyne Lampin ◽  
Guilhem Larrieu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Depth Profiling ◽  
Dopant Activation ◽  
Dopant Segregation ◽  
Platinum Silicide ◽  
Plasma Doping ◽  
Sims Depth Profiling

ABSTRACTThe role of the dopant activation on the segregation efficiency during the formation of platinum silicide (PtSi) is investigated in this paper. Using an implant before silicidation technique, we first demonstrate an important Schottky Barrier Height (SBH) modulation for As and B segregation. In the case of As, we highlight that an activation of the dopants before the silcidation does not impact the SBH modulation. On the contrary, an important impact of the dopant crystalline position is evidenced for Boron. Also, a comparison of conventional implant versus a PLAsma Doping (PLAD) highlights the suitability of the latter implantation tool for the SBH modulation. Those results are interpreted on the basis of SIMS depth profiling.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements
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