Noise model of gate-leakage current in ultrathin oxide MOSFETs

Jonghwan Lee; G. Bosman; K.R. Green; D. Ladwig

doi:10.1109/ted.2003.819254

Noise model of gate-leakage current in ultrathin oxide MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.819254 ◽

2003 ◽

Vol 50 (12) ◽

pp. 2499-2506 ◽

Cited By ~ 25

Author(s):

Jonghwan Lee ◽

G. Bosman ◽

K.R. Green ◽

D. Ladwig

Keyword(s):

Leakage Current ◽

Noise Model ◽

Gate Leakage Current ◽

Gate Leakage ◽

Ultrathin Oxide

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Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(03)00220-x ◽

2003 ◽

Vol 47 (11) ◽

pp. 1973-1981 ◽

Cited By ~ 6

Author(s):

Jonghwan Lee ◽

Gijs Bosman

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Ultrathin Oxide

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Gate leakage current: A sensitive characterization parameter for plasma-induced damage detection in ultrathin oxide submicron transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581139 ◽

1998 ◽

Vol 16 (3) ◽

pp. 1664-1669 ◽

Cited By ~ 3

Author(s):

J. Jiang ◽

O. O. Awadelkarim ◽

J. Werking

Keyword(s):

Damage Detection ◽

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Ultrathin Oxide

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A new temperature noise model of HFET with special emphasis on a gate-leakage current and investigation of the bias dependence of the equivalent noise sources

10.1109/euma.1995.336947 ◽

1995 ◽

Cited By ~ 6

Author(s):

R Reuter ◽

St van Waasen ◽

D Peters ◽

U Auer ◽

W Brockerhoff ◽

...

Keyword(s):

Leakage Current ◽

Noise Model ◽

Gate Leakage Current ◽

Gate Leakage ◽

Noise Sources ◽

Temperature Noise

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Reduction of On-Resistance in Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Gate Leakage Current

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.128.885 ◽

2008 ◽

Vol 128 (6) ◽

pp. 885-889

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

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Fast Gate Leakage Current Monitor With Large Dynamic Range

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2021.3068628 ◽

2021 ◽

pp. 1-1

Author(s):

Kushagra Bhatheja ◽

Xiankun Jin ◽

Matthew Strong ◽

Degang Chen

Keyword(s):

Leakage Current ◽

Dynamic Range ◽

Gate Leakage Current ◽

Gate Leakage ◽

Large Dynamic Range

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Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC) ◽

10.1109/esars-itec.2018.8607551 ◽

2018 ◽

Cited By ~ 1

Author(s):

Frederic Richardeau ◽

Francois Boige ◽

Stephane Lefebvre

Keyword(s):

Leakage Current ◽

Failure Mode ◽

Safety Management ◽

Open Circuit ◽

Gate Leakage Current ◽

Gate Leakage ◽

Power Mosfet

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Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

Electronics and Communications in Japan ◽

10.1002/ecj.10213 ◽

2010 ◽

Vol 93 (6) ◽

pp. 19-24 ◽

Cited By ~ 3

Author(s):

Kazuki Nomoto ◽

Masataka Satoh ◽

Tohru Nakamura

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gan Hemts ◽

Ion Implanted

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Investigating a Novel Normally-On AlGaN/GaN Capped PHEMT and the Effects of Cap Layers Thickness on its Gate Leakage Current

Electrical Engineering (ICEE), Iranian Conference on ◽

10.1109/icee.2018.8472634 ◽

2018 ◽

Author(s):

Tara Ghafouri ◽

Alireza Salehi ◽

Hedie Mahmoodnia

Keyword(s):

Leakage Current ◽

Gate Leakage Current ◽

Gate Leakage

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Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Solid State Ionics ◽

10.1016/j.ssi.2018.11.004 ◽

2018 ◽

Vol 328 ◽

pp. 30-34 ◽

Cited By ~ 1

Author(s):

Qi Wang ◽

Yaomi Itoh ◽

Tohru Tsuruoka ◽

Masakazu Aono ◽

Deyan He ◽

...

Keyword(s):

Oxygen Vacancy ◽

Leakage Current ◽

Gate Bias ◽

Gate Leakage Current ◽

Gate Leakage

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Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l1598 ◽

2004 ◽

Vol 43 (No. 12B) ◽

pp. L1598-L1600 ◽

Cited By ~ 2

Author(s):

Takuji Hosoi ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Effect Transistor ◽

Soft Breakdown

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