Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

2003 ◽  
Vol 50 (4) ◽  
pp. 1145-1148 ◽  
Author(s):  
C.D. Wang ◽  
C.Y. Zhu ◽  
G.Y. Zhang ◽  
J. Shen ◽  
L. Li
Keyword(s):  
Interfacial Layer ◽  
Electrical Characterization ◽  
Semiconductor Diode ◽  
Negative Capacitance

Structural and Electrical Characterization of Diatom Pinnularia sp. Biosilica Coated with CdS Thin Film

2009 ◽  
Vol 1187 ◽  
Author(s):  
Timothy Gutu ◽  
Clayton Jeffryes ◽  
Wei Wang ◽  
Chih-hung Chang ◽  
Gregory Rorrer ◽  
...  
Keyword(s):  
Thin Film ◽  
Cell Walls ◽  
Electrical Characterization ◽  
Semiconductor Diode ◽  
Electrical Characteristics ◽  
Cds Thin Film ◽  
Diode Behavior ◽  
Microscopy Techniques ◽  
Freshwater Environments

AbstractDiatoms are unicellular, photosynthetic microalgae that live in marine and freshwater environments. The cell walls of diatoms are composed of biosilica and have exceedingly hierarchical ornate nanostructures. Consequently, these nanostructures have long been regarded as the paradigm for future silica nanotechnology. We have coated diatom Pinnularia sp. biosilica with a thin film of CdS using a chemical bath deposition technique. Possible uses for these CdS coated diatoms include the development of new nanodevice fabrication techniques and optoelectronic applications. Electron microscopy techniques were utilized to study their morphologies. Their electrical characteristics were investigated using an Agilent 4156C precision semiconductor parameter analyzer and a Cascade probe station. The CdS coating was found to be dense, adherent and nanostructured. The diatoms coated with CdS exhibited both metallic and semiconductor diode behavior.

A novel method of electrical characterization of a semiconductor diode at forward bias

2006 ◽  
Vol 50 (5) ◽  
pp. 821-825 ◽  
Author(s):  
C.Y. Zhu ◽  
C.D. Wang ◽  
L.F. Feng ◽  
G.Y. Zhang ◽  
L.S. Yu ◽  
...  
Keyword(s):  
Forward Bias ◽  
Electrical Characterization ◽  
Semiconductor Diode ◽  
Novel Method

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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