Device characteristics of the 3-d bicmos technology using selective epitaxial growth and lateral solid phase epitaxy

2002 ◽  
Vol 49 (12) ◽  
pp. 2359-2362
Author(s):  
Haitao Liu ◽  
M. Kumar ◽  
J.K.O. Sin
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Selective Epitaxial Growth ◽  
Bicmos Technology

Selective Epitaxial Growth Followed by in Situ Deposition of a- or Poly-Si for Seeded Soi.

1987 ◽  
Vol 107 ◽  
Author(s):  
L. Karapiperis ◽  
G. Garry ◽  
D. Dieumegard
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Zone Melting ◽  
Solid Phase Epitaxy ◽  
3D Integration ◽  
Thermal Budget ◽  
Selective Epitaxial Growth ◽  
In Situ Deposition ◽  
Thermal Compatibility

AbstractSelective Epitaxial Growth (SEG) techniques find a growing number of applications in the field of Si IC's, such as, lateral isolation, vertical interconnects, seeded recrystallisation etc. In the present work, the use of Si SEG by CVD combined with in-situ deposition of a- or poly-Si for the improvement of SOI obtained by Zone Melting Recrystallisation (ZMR) or by Lateral Solid Phase Epitaxy (SPE) is described. The principle application for which the present work is intended is Three Dimentional (3D) Integration. One of the main constraints imposed on process is thermal compatibility with previously executed process steps. Hence the need to reduce the thermal budget for the Selective Epitaxial Growth as much as possible.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

2003 ◽  
Vol 762 ◽  
Author(s):  
M. S. Mason ◽  
C.M. Chen ◽  
H.A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Polycrystalline Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
Silicon Growth

AbstractWe investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

scholarly journals Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms

1990 ◽  
Vol 205 ◽  
Author(s):  
Guo-Quan Lu ◽  
Eric Nygren ◽  
Michael J. Aziz
Keyword(s):  
Hydrostatic Pressure ◽  
Point Defect ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Dangling Bond ◽  
Amorphous Phases ◽  
Plausible Model ◽  
Bond Mechanism

AbstractWe have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped Ge(100) and Si(100) into their respective self-implanted amorphous phases. We found that pressure enhances the growth process in both Si and Ge, with activation volumes equal to -3.3 ± 0.3 cm3/mole for Si and -6.3 ± 0.60 cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms, proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull dangling bond mechanism shows it to be a highly plausible model for the growth process.

Kinetics and Mechanisms of Solid Phase Epitaxy and Competitive Processes in Silicon

1984 ◽  
Vol 35 ◽  
Author(s):  
G.L. Olson
Keyword(s):  
Amorphous Silicon ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Temperature Dependent ◽  
Solid Phase Crystallization ◽  
Induced Changes ◽  
Kinetics Of ◽  
Very High

ABSTRACTRecent progress in studies of temperature dependent kinetic competition during solid phase crystallization of silicon is reviewed. Specific areas which are emphasized include: the enhancement of solid phase epitaxial growth rates by impurity-induced changes in electronic properties at the crystal/amorphous interface, the influence of impurity diffusion and precipitation in amorphous silicon on the kinetics of epitaxial growth, the effects of impurities on the kinetic competition between solid phase epitaxy and random crystallization, and the kinetics of solid phase crystallization at very high temperatures in silicon.

Epitaxial growth of strain‐free Ge films on Si substrates by solid phase epitaxy at ultrahigh pressure

1992 ◽  
Vol 61 (16) ◽  
pp. 1951-1953 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Takayoshi Sato ◽  
Akira Sawaoka
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Si Substrates
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