scholarly journals A CMOS ISFET Interface Circuit With Dynamic Current Temperature Compensation Technique

2007 ◽  
Vol 54 (1) ◽  
pp. 119-129 ◽  
Author(s):  
P. K. Chan ◽  
D. Y. Chen
Keyword(s):  
Temperature Compensation ◽  
Interface Circuit ◽  
Compensation Technique

A Temperature Compensation Technique for a Dynamic Amplifier in Pipelined-SAR ADCs

2018 ◽  
Vol 1 (1) ◽  
pp. 10-13 ◽  
Author(s):  
Minglei Zhang ◽  
Kyoohyun Noh ◽  
Xiaohua Fan ◽  
Edgar Sanchez-Sinencio
Keyword(s):  
Temperature Compensation ◽  
Compensation Technique

Temperature Compensation Technique in Cable Tension Sensor Based on Magneto-Elastic Effect

2013 ◽  
Vol 791-793 ◽  
pp. 1863-1866
Author(s):  
De Dong Tang ◽  
Hong Jun Zhu ◽  
Ming Fang Wu ◽  
Jun Lan Mou
Keyword(s):  
Temperature Compensation ◽  
Temperature Influence ◽  
Bias Magnetic Field ◽  
Cable Tension ◽  
Elastic Effect ◽  
Tension Sensor ◽  
Compensation Technique ◽  
Novel Method ◽  
The Common ◽  
Ideal Method

Magneto-elastic cable tension sensor have a number of advantages, it will be ideal method to measure cable tension in large span cable-bridge, but the sensor is sensitive to temperature, so the temperature influence is not negligible to sensor. In this paper, the principle of cable tension sensor based on magnetic-elastic effect is introduced, the common temperature compensation technique are detail analyzed. A novel method of temperature compensation by adjusting the bias magnetic field is put forward, by theoretical analysis and experiment, indicated that it is feasible to compensated the temperature influence.

scholarly journals A Novel Conditioning Circuit for Floating-Gate ISFET Bio-Sensor

2021 ◽  
Vol 15 ◽  
pp. 1174-1183
Author(s):  
Ahmed Gaddour ◽  
Hafedh Ben Hassen ◽  
Wael Dghais ◽  
Hamdi Belgacem ◽  
Mounir Ben Ali
Keyword(s):  
Integrated Circuit ◽  
Temperature Compensation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Measurement Range ◽  
Floating Gate ◽  
Readout Circuit ◽  
Output Measurement ◽  
Interface Circuit ◽  
Thermal Stability Of

Floating-Gate-Ions-Sensitive-Field-Effect-Transistors (FG-ISFETs) are becoming the sensor’s platform for various fields such as biomedical and chemical sensors. Despite many advantages like quick response, small size as well as wide measurement range, the efficiency of the output measurement is widely affected by temperature, This requires more safety in the measured results and the analysis’s tools. This study describes a novel integrated circuit that improves the thermal stability of the output signal of the ion-sensitive field effect transistors (ISFETs). After that, we investigate the temperature dependency of the FG-ISFET using the mentioned macro model and we shows that the temperature coefficient is about of 6 mV/°C. Afterward, a new integrated interface circuit that can perform great temperature compensation was developed. This operation aims to enhance stability of readout circuit for FG-ISFET. The achieved result of the FG-ISFET under different simulations shows that the readout circuit has a good temperature compensation i.e. :2.4 〖10〗^(-9) mV/°C.

scholarly journals Linear Variable Differential Transformer Temperature Compensation Technique

2018 ◽  
Vol 30 (10) ◽  
pp. 2171
Author(s):  
Wandee Petchmaneelumka ◽  
Pitsini Mano ◽  
Vanchai Riewruja
Keyword(s):  
Temperature Compensation ◽  
Linear Variable Differential Transformer ◽  
Compensation Technique
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