Thermal management strategies for high power semiconductor pump lasers

2006 ◽  
Vol 29 (2) ◽  
pp. 268-276 ◽  
Author(s):  
Xingsheng Liu ◽  
M.H. Hu ◽  
C.G. Caneau ◽  
R. Bhat ◽  
Chung-En Zah
2021 ◽  
Vol 9 ◽  
Author(s):  
Yixiong Yan ◽  
Yu Zheng ◽  
Haigang Sun ◽  
Ji’an Duan

In the past 20 years, semiconductor lasers have been widely used in medical, industrial, and communication applications, providing a revolutionary and powerful platform for the fifth generation and advanced manufacturing. Semiconductor laser has the advantages of small size, lightweight, high reliability and easy modulation, becoming increasingly popular. However, due to the laser diode emission mechanism limitation, the beam quality is inferior and cannot be directly applied and required to be handled by beam shaping. However, the packaging of multiple beam shaping optical components is accompanied by risks due to misalignment. The misalignment error of the optical components has a great hidden danger to the laser performance. As semiconductor lasers' power gradually increases, lasers' thermal management technology is also increasingly strict. Therefore, this article first reviews the beam shaping technology of semiconductor laser diode array. Secondly, the analysis of the influence of the array semiconductor laser optical device's misalignment is reviewed, and a feasible solution is proposed. Finally, it summarizes the researches on thermal management in high-power semiconductor lasers. This article aims to give readers a comprehensive and broad understanding of semiconductor laser packaging's technical difficulties and to recognize each corresponding solution.


2008 ◽  
Author(s):  
Wolfgang Diehl ◽  
Tony Albrecht ◽  
Peter Brick ◽  
Michael Furitsch ◽  
Stefan Illek ◽  
...  

2019 ◽  
Vol 141 (2) ◽  
Author(s):  
Seung Kyu Oh ◽  
James Spencer Lundh ◽  
Shahab Shervin ◽  
Bikramjit Chatterjee ◽  
Dong Kyu Lee ◽  
...  

GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics; (2) practical thermal management solutions for GaN power electronics; and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.


2021 ◽  
Vol 139 ◽  
pp. 106927
Author(s):  
Jiaojiao Wang ◽  
Linlin Shi ◽  
Yan Li ◽  
Liang Jin ◽  
Yingtian Xu ◽  
...  

2020 ◽  
Vol 41 (9) ◽  
pp. 1158-1164
Author(s):  
Bo LI ◽  
◽  
Zhen-fu WANG ◽  
Bo-cang QIU ◽  
Guo-wen YANG ◽  
...  

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