Near-infrared InN nanowire optoelectronic devices on Si

2014 ◽  
Author(s):  
Songrui Zhao ◽  
Hieu Pham Trung Nguyen ◽  
Zetian Mi
Keyword(s):  
Near Infrared ◽  
Optoelectronic Devices

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals High performing flexible optoelectronic devices using thin films of topological insulator

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Nonlinear Optical Properties ◽  
Metallic Surface ◽  
Strong Light ◽  
High Performing ◽  
Decay Times

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

scholarly journals Promoting luminescence of Yb/Er codoped ferroelectric composite by polarization engineering for optoelectronic applications

Nanophotonics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 2215-2223 ◽  
Author(s):  
Er Pan ◽  
Gongxun Bai ◽  
Yutao Peng ◽  
Liang Chen ◽  
Shiqing Xu
Keyword(s):  
Rare Earth ◽  
Electric Field ◽  
Electrical Resistance ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Glass Ceramics ◽  
Luminescent Properties ◽  
Rare Earth Ions ◽  
Luminescent Materials ◽  
Crystal Structural

AbstractFerroelectric oxide nanocrystals, in combination with the robust coupling of an electric field with crystal structure symmetry, makes such systems agreeable to field-induced crystal structural transformation. The luminescent properties of rare earth ions are sensitive to the symmetry of the surrounding crystal field. The luminescence tuning of rare earth ions is an important assignment in the research of luminescent materials. However, the current conditional feasibility and reversibility in the exploration of luminescence modification remain major challenges. In this article, the luminescence modulation of rare earth ions has been developed in Yb3+/Er3+ codoped ferroelectrics glass ceramics containing Bi4Ti3O12 nanocrystals through an electric field. The inclusion of nanocrystals in the glass matrix greatly enhances the electrical resistance. Both upconversion and near-infrared emissions of rare earth ions are effectively enhanced more than twice via polarization engineering. The electric field regulates the photonic properties of rare earth ions with excellent reversibility and nonvolatility in ferroelectrics. The effective modification by electric field provides a new scheme for optical storage and optoelectronic devices.

scholarly journals Antireflection Enhancement by Composite Nanoporous Zeolite 3A–Carbon Thin Film

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1641 ◽  
Author(s):  
Maksym Stetsenko ◽  
Salvatore A. Pullano ◽  
Tetiana Margitych ◽  
Lidia Maksimenko ◽  
Ali Hassan ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Spin Coating ◽  
Diffuse Reflectance ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Cost Effective ◽  
High Iodine ◽  
Effective Spin ◽  
Infrared Wavelength ◽  
Broadband Antireflection

A straightforward and effective spin-coating technique at 120 °C was investigated for the deposition of a thin nanoporous layer with antireflection properties onto glass and indium tin oxide (ITO) coated glass. A mixture of zeolite 3A powder and high iodine value vegetable oil was deposited, creating a carbonic paste with embedded nanoporous grains. Experimental results evidenced excellent broadband antireflection over the visible-near-infrared wavelength range (450–850 nm), with a diffuse reflectance value of 1.67% and 1.79%. Structural and optical characteristics stabilized over time. The results are promising for the accessible and cost-effective fabrication of an antireflective surface for optoelectronic devices.

Ultra-sensitive near-infrared graphene photodetectors with nanopillar antennas

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17459-17464 ◽  
Author(s):  
Yu Liu ◽  
Wen Huang ◽  
Tianxun Gong ◽  
Yue Su ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Absorption Spectrum ◽  
Carrier Mobility ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Broad Absorption ◽  
High Carrier Mobility ◽  
High Carrier

Graphene has been demonstrated as a candidate for optoelectronic devices due to its broad absorption spectrum and ultra-high carrier mobility.

Tuning Optical Absorption and Emission of Sub-Nanometer Gold-Caged Metal Systems M@Au14 by Substitutional Doping

2006 ◽  
Vol 3 (2) ◽  
pp. 312-314 ◽  
Author(s):  
John R. H. Xie ◽  
Chiu Fung Cheung ◽  
Jijun Zhao
Keyword(s):  
Optical Absorption ◽  
Spectral Properties ◽  
Near Infrared ◽  
Experimental Studies ◽  
Optoelectronic Devices ◽  
Wavelength Region ◽  
Optical Excitation ◽  
Substitutional Doping ◽  
Energy Gaps ◽  
Tuning Scheme

Gao, Bulusu and Zeng have recently reported a new series of isoelectronic, sub-nanometer gold-caged metal systems M@Au14 which have large energy gaps than icosahedral W@Au12 and Au32 and tetrahedral Au20. In this communication, we propose a "tuning" scheme, substitutional-doping, to achieve the tunable optical excitation and emission of M@Au14 over a broad wavelength region. For example, the optical absorption gaps of isoelectronic M@Au14 could be tuned from the near infrared to green by substituting the metal M with group IIIB, IVB, and VB constituents in the periodic table. Our results provide basic guidelines for further experimental studies on the spectral properties of M@Au14 as well as for the development of M@Au14-based tunable optoelectronic devices.

Aromatic [b]-fused BODIPY dyes as promising near-infrared dyes

2020 ◽  
Vol 18 (22) ◽  
pp. 4135-4156 ◽  
Author(s):  
Jun Wang ◽  
Noël Boens ◽  
Lijuan Jiao ◽  
Erhong Hao
Keyword(s):  
Near Infrared ◽  
Optoelectronic Devices ◽  
Spectroscopic Properties ◽  
Molecular Structures ◽  
Design And Synthesis

This review describes aromatic [b]-fused BODIPY dyes with the focus on design and synthesis, the relationships between their photophysical/spectroscopic properties and molecular structures, and potential uses in bioassays and optoelectronic devices.

scholarly journals Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Hang Yang ◽  
Wei Chen ◽  
Xiaoming Zheng ◽  
Dongsheng Yang ◽  
Yuze Hu ◽  
...  
Keyword(s):  
External Quantum Efficiency ◽  
Detection Rate ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Quick Response ◽  
High Detection Rate ◽  
Photoelectric Properties ◽  
Highly Sensitive ◽  
High Detection ◽  
Photo Response

AbstractThe near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.

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