Ultra-sensitive near-infrared graphene photodetectors with nanopillar antennas

Nanoscale ◽  
2017 ◽  
Vol 9 (44) ◽  
pp. 17459-17464 ◽  
Author(s):  
Yu Liu ◽  
Wen Huang ◽  
Tianxun Gong ◽  
Yue Su ◽  
Hua Zhang ◽  
...  

Graphene has been demonstrated as a candidate for optoelectronic devices due to its broad absorption spectrum and ultra-high carrier mobility.

Nanoscale ◽  
2020 ◽  
Vol 12 (36) ◽  
pp. 18931-18937
Author(s):  
Wenhan Zhou ◽  
Shengli Zhang ◽  
Shiying Guo ◽  
Hengze Qu ◽  
Bo Cai ◽  
...  

2D materials with direct bandgaps and high carrier mobility are considered excellent candidates for next-generation electronic and optoelectronic devices.


NANO ◽  
2016 ◽  
Vol 11 (07) ◽  
pp. 1650082 ◽  
Author(s):  
Yang Hang ◽  
Qi Li ◽  
Wei Luo ◽  
Yanlan He ◽  
Xueao Zhang ◽  
...  

The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] and a relatively high carrier mobility (1.79[Formula: see text]cm[Formula: see text]. The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity ([Formula: see text][Formula: see text]mA/W), quick response time ([Formula: see text][Formula: see text]ms), high external quantum efficiency ([Formula: see text] and high detection rate ([Formula: see text] for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.


Author(s):  
Maurizio Casalino

In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.


2014 ◽  
Vol 5 (17) ◽  
pp. 4984-4992 ◽  
Author(s):  
Zhenguo Wang ◽  
Jie Zhao ◽  
Ying Li ◽  
Qiang Peng

Fluorination of isoindigo affords a dithienosilole-based low band-gap copolymer with low-lying energy levels, strong and broad absorption, high carrier mobility as well as efficient power conversion efficiency.


2021 ◽  
Author(s):  
Hong-Cai Zhou ◽  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
...  

2021 ◽  
Vol 60 (19) ◽  
pp. 10806-10813
Author(s):  
Yan Yue ◽  
Peiyu Cai ◽  
Xiaoyi Xu ◽  
Hanying Li ◽  
Hongzheng Chen ◽  
...  

2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.


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