Analysis and suppression of hysteretic behaviors in PD-SOI CMOS circuits

2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125) ◽

10.1109/soi.2000.892769 ◽

2002 ◽

Cited By ~ 1

Author(s):

H. Higuchi ◽

T. Ikeda

Keyword(s):

Cmos Circuits ◽

Soi Cmos

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Hysteresis in floating-body PD/SOI CMOS circuits

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) ◽

10.1109/vtsa.1999.786054 ◽

2003 ◽

Cited By ~ 16

Author(s):

M.M. Pelella ◽

C.T. Chuang ◽

C. Tretz ◽

B.W. Curran ◽

M.G. Rosenfield

Keyword(s):

Floating Body ◽

Cmos Circuits ◽

Soi Cmos

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On the Temperature Dependence of Hysteresis Effect in Floating-Body Partially-Depleted SOI CMOS Circuits

10.7567/ssdm.2000.c-7-4 ◽

2000 ◽

Author(s):

R. Puri ◽

C. T. Chuang ◽

M. B. Ketchen ◽

M. M. Pelella ◽

M. G. Rosenfield

Keyword(s):

Temperature Dependence ◽

Hysteresis Effect ◽

Floating Body ◽

Cmos Circuits ◽

Soi Cmos

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Effects of Gate-to-Body Tunneling Current on PD/SOI CMOS Circuits

10.7567/ssdm.2001.c-5-4 ◽

2001 ◽

Cited By ~ 2

Author(s):

C. T. Chuang ◽

R. Puri ◽

K. Bernstein

Keyword(s):

Tunneling Current ◽

Cmos Circuits ◽

Soi Cmos

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Hysteresis effect in pass-transistor based partially-depleted SOI CMOS circuits

1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) ◽

10.1109/soi.1998.723132 ◽

2002 ◽

Cited By ~ 9

Author(s):

R. Puri ◽

C.T. Chuang

Keyword(s):

Hysteresis Effect ◽

Cmos Circuits ◽

Pass Transistor ◽

Soi Cmos

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SOI/CMOS circuits fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates

IEEE Electron Device Letters ◽

10.1109/edl.1982.25613 ◽

1982 ◽

Vol 3 (12) ◽

pp. 398-401 ◽

Cited By ~ 11

Author(s):

B.Y. Tsaur ◽

J.C.C. Fan ◽

R.L. Chapman ◽

M.W. Geis ◽

D.J. Silversmith ◽

...

Keyword(s):

Zone Melting ◽

Cmos Circuits ◽

Si Substrates ◽

Si Films ◽

Soi Cmos

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Characteristics of SOI CMOS circuits made in n/n+/n oxidised porous silicon structures

Electronics Letters ◽

10.1049/el:19860886 ◽

1986 ◽

Vol 22 (24) ◽

pp. 1291 ◽

Cited By ~ 24

Author(s):

K. Barla ◽

G. Bomchil ◽

R. Herino ◽

A. Monroy ◽

Y. Gris

Keyword(s):

Porous Silicon ◽

Cmos Circuits ◽

Silicon Structures ◽

Made In ◽

Soi Cmos

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A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits

IEEE Transactions on Electron Devices ◽

10.1109/16.372078 ◽

1995 ◽

Vol 42 (4) ◽

pp. 728-737 ◽

Cited By ~ 62

Author(s):

Dongwook Suh ◽

J.G. Fossum

Keyword(s):

Floating Body ◽

Cmos Circuits ◽

Fully Depleted ◽

Floating Body Effects ◽

Soi Cmos

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Performance issues of SOI CMOS circuits at low supply voltages

Proceedings of 1993 IEEE International SOI Conference ◽

10.1109/soi.1993.344572 ◽

2002 ◽

Author(s):

H.B. Abel ◽

G. Zimmer

Keyword(s):

Cmos Circuits ◽

Performance Issues ◽

Supply Voltages ◽

Soi Cmos

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Hysteresis effect in pass-transistor-based, partially depleted SOI CMOS circuits

IEEE Journal of Solid-State Circuits ◽

10.1109/4.839922 ◽

2000 ◽

Vol 35 (4) ◽

pp. 625-631 ◽

Cited By ~ 18

Author(s):

R. Puri ◽

Ching-Te Chuang

Keyword(s):

Hysteresis Effect ◽

Cmos Circuits ◽

Pass Transistor ◽

Soi Cmos

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Detailed analysis of the gate delay variability in partially depleted SOI CMOS circuits

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345) ◽

10.1109/soi.1999.819848 ◽

2003 ◽

Cited By ~ 5

Author(s):

I. Aller ◽

K.E. Kroell

Keyword(s):

Detailed Analysis ◽

Cmos Circuits ◽

Gate Delay ◽

Delay Variability ◽

Soi Cmos

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