A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits
1995 ◽
Vol 42
(4)
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pp. 728-737
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Keyword(s):
1997 ◽
Vol 32
(8)
◽
pp. 1241-1253
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2001 ◽
Vol 36
(2)
◽
pp. 290-298
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2004 ◽
Vol 48
(6)
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pp. 969-978
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