Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients

2003 ◽  
Author(s):  
D. Navarro ◽  
K. Hisamitsu ◽  
T. Yamaoka ◽  
M. Tanaka ◽  
H. Kawano ◽  
...  
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Field Gradients

scholarly journals Modeling and analysis of the characteristics of SiC MOSFET

2021 ◽  
Vol 2125 (1) ◽  
pp. 012051
Author(s):  
Guoqing Qiu ◽  
Kedi Jiang ◽  
Shengyou Xu ◽  
Xin Yang ◽  
Wei Wang
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Simulation Models ◽  
Data Sheet ◽  
Superior Performance ◽  
Power Devices ◽  
Matlab Simulink ◽  
Modeling And Analysis ◽  
Mathematical Processing

Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.

P‐16.10: The Introduction of Circuit Simulation Model for TDDI Panels

2021 ◽  
Vol 52 (S2) ◽  
pp. 1092-1094
Author(s):  
Yi Liu ◽  
Shijun Wang ◽  
Jiguo Wang ◽  
Bo Feng ◽  
Xinlan Yang ◽  
...  
Keyword(s):  
Simulation Model ◽  
Circuit Simulation

scholarly journals Circuit simulation model for ultimately-scaled ballistic nanowire MOSFETs

2013 ◽  
Vol 10 (1) ◽  
pp. 20120906-20120906 ◽  
Author(s):  
Tatsuhiro Numata ◽  
Shigeyasu Uno ◽  
Kazuo Nakazato
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Nanowire Mosfets

Submicron CMOS Circuit Simulation Model Accurate from Liquid Nitrogen to Room Temperature

ESSDERC ’89 ◽  
1989 ◽  
pp. 407-412
Author(s):  
H. I. Hanafi ◽  
T. J. Bucelot ◽  
D. S. Zicherman ◽  
R. W. Weiss ◽  
P. J. Restle
Keyword(s):  
Simulation Model ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Circuit Simulation ◽  
Cmos Circuit ◽  
Submicron Cmos
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