A Circuit Simulation Model of a Novel Silicon Lateral Trench Power MOSFET for High Frequency Switching Applications

2006 ◽  
Author(s):  
K.R. Varadarajan ◽  
A. Sinkar ◽  
T.p. Chow
Keyword(s):  
Simulation Model ◽  
High Frequency ◽  
Circuit Simulation ◽  
Power Mosfet

A circuit simulation model for V-groove SiC power MOSFET

2016 ◽  
Author(s):  
Michihiro Shintani ◽  
Kazuki Oishi ◽  
Rui Zhou ◽  
Masayuki Hiromoto ◽  
Takashi Sato
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Power Mosfet

scholarly journals Power MOSFET Linearizer of a High-Voltage Power Amplifier for High-Frequency Pulse-Echo Instrumentation

Sensors ◽  
2017 ◽  
Vol 17 (4) ◽  
pp. 764 ◽  
Author(s):  
Hojong Choi ◽  
Park Woo ◽  
Jung-Yeol Yeom ◽  
Changhan Yoon
Keyword(s):  
Power Amplifier ◽  
High Voltage ◽  
High Frequency ◽  
Power Mosfet ◽  
Pulse Echo ◽  
Frequency Pulse

scholarly journals Modeling and analysis of the characteristics of SiC MOSFET

2021 ◽  
Vol 2125 (1) ◽  
pp. 012051
Author(s):  
Guoqing Qiu ◽  
Kedi Jiang ◽  
Shengyou Xu ◽  
Xin Yang ◽  
Wei Wang
Keyword(s):  
Simulation Model ◽  
Circuit Simulation ◽  
Power Conversion ◽  
Simulation Models ◽  
Data Sheet ◽  
Superior Performance ◽  
Power Devices ◽  
Matlab Simulink ◽  
Modeling And Analysis ◽  
Mathematical Processing

Abstract Although the superior performance of SiC MOSFET devices has beenvalidated by many studies, it is necessary to overcome many technical bottlenecks to make SiC MOSFET gradually replace Si-based power devices into the mainstream. In view of the current situation where the performance of SiC MOSFETs in power conversion devices cannot be evaluated well at this stage, it is necessary to carry out fine modeling of SiC MOSFETs and establish accurate simulation models. In this paper, the powerful mathematical processing capability and rich modules of Matlab/Simulink are used to build a SiC MOSFET model, and then the product data sheet is compared with the fitted data. The results show that the switching simulation waveforms are in general agreement with the data sheet waveforms, and the error is less than 7%. Verifing the accuracy of the model and reducing the difficulty of modeling, it provides a new idea for establishing the circuit simulation model of SiC MOSFET in Matlab/Simulink.

P‐16.10: The Introduction of Circuit Simulation Model for TDDI Panels

2021 ◽  
Vol 52 (S2) ◽  
pp. 1092-1094
Author(s):  
Yi Liu ◽  
Shijun Wang ◽  
Jiguo Wang ◽  
Bo Feng ◽  
Xinlan Yang ◽  
...  
Keyword(s):  
Simulation Model ◽  
Circuit Simulation
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