Characterization of InGaAs/GaAs strained‐layer quantum wells grown on (311)A GaAs substrates

Mitsuo Takahashi; Pablo Vaccaro; Kazuhisa Fujita; Toshihide Watanabe

doi:10.1063/1.114157

Characterization of InGaAs/GaAs strained‐layer quantum wells grown on (311)A GaAs substrates

Applied Physics Letters ◽

10.1063/1.114157 ◽

1995 ◽

Vol 66 (1) ◽

pp. 93-95 ◽

Cited By ~ 8

Author(s):

Mitsuo Takahashi ◽

Pablo Vaccaro ◽

Kazuhisa Fujita ◽

Toshihide Watanabe

Keyword(s):

Quantum Wells ◽

Strained Layer ◽

Gaas Substrates

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Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.352005 ◽

1992 ◽

Vol 72 (11) ◽

pp. 5233-5239 ◽

Cited By ~ 50

Author(s):

Shizuo Fujita ◽

Yi‐hong Wu ◽

Yoichi Kawakami ◽

Shigeo Fujita

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Strained Layer ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°‐off GaAs substrates using ethyldimethylindium

Applied Physics Letters ◽

10.1063/1.106504 ◽

1992 ◽

Vol 60 (8) ◽

pp. 1007-1009 ◽

Cited By ~ 7

Author(s):

T. Y. Wang ◽

D. F. Welch ◽

D. R. Scifres ◽

D. W. Treat ◽

R. D. Bringans ◽

...

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Vapor Phase ◽

Gaas Substrates

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Characterization of silicon ion-implantation damage in single-strained-layer (InGa)As/GaAs quantum wells

Journal of Electronic Materials ◽

10.1007/bf02652126 ◽

1988 ◽

Vol 17 (5) ◽

pp. 405-409 ◽

Cited By ~ 7

Author(s):

D. R. Myers ◽

G. W. Arnold ◽

I. J. Fritz ◽

L. R. Dawson ◽

R. M. Biefeld ◽

...

Keyword(s):

Ion Implantation ◽

Quantum Wells ◽

Strained Layer ◽

Implantation Damage

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Characterization of (In,Ga)As/GaAs strained-layer multiple quantum wells with high-resolution X-ray diffraction and computer simulations

Applied Surface Science ◽

10.1016/0169-4332(91)90144-9 ◽

1991 ◽

Vol 50 (1-4) ◽

pp. 92-96 ◽

Cited By ~ 6

Author(s):

R. Zaus ◽

M. Schuster ◽

H. Göbel ◽

J.-P. Reithmaier

Keyword(s):

High Resolution ◽

Quantum Wells ◽

Computer Simulations ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

X Ray Diffraction ◽

X Ray ◽

Strained Layer

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MOCVD growth and characterization of AlGaP/GaP/InGaP/GaP strained-layer single quantum wells

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328181 ◽

2002 ◽

Author(s):

M. Rabiul Islam ◽

J. Neff ◽

R. Chelakara ◽

R.D. Dupuis

Keyword(s):

Quantum Wells ◽

Single Quantum ◽

Strained Layer ◽

Mocvd Growth

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Characterization of MBE grown strained-layer superlattices and single quantum wells by photoluminescence topography

Superlattices and Microstructures ◽

10.1016/0749-6036(89)90086-4 ◽

1989 ◽

Vol 6 (1) ◽

pp. 13-15 ◽

Cited By ~ 4

Author(s):

K. Iizuka ◽

A. Nomura ◽

M. Hasobe ◽

T. Suzuki

Keyword(s):

Quantum Wells ◽

Single Quantum ◽

Strained Layer ◽

Strained Layer Superlattices

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Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242749 ◽

2005 ◽

Author(s):

T. Kusano ◽

A. Satake ◽

K. Fujiwara ◽

S. Shimomura ◽

T. Kitada ◽

...

Keyword(s):

Quantum Wells ◽

Gaas Substrates

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Metalorganic Vapor Phase Epitaxy Growth and Characterization of (AlxGa1-x)0.5In0.5P/Ga0.5In0.5P (x=0.4, 0.7 and 1.0) Quantum Wells on 15°-Off-(100) GaAs Substrates at High Growth Rate

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4460 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4460-4466 ◽

Cited By ~ 12

Author(s):

Ming-Jiunn Jou ◽

Jyh-Feng Lin ◽

Chuan-Ming Chang ◽

Chun-Hung Lin ◽

Meng-Chyi Wu ◽

...

Keyword(s):

Growth Rate ◽

Quantum Wells ◽

Vapor Phase ◽

High Growth ◽

Metalorganic Vapor Phase Epitaxy ◽

High Growth Rate ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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Molecular beam epitaxial growth and optical characterization of GaAs/AlxGa1−xAs quantum wells on nominally oriented (111)B GaAs substrates

Applied Physics Letters ◽

10.1063/1.110422 ◽

1993 ◽

Vol 63 (19) ◽

pp. 2691-2693 ◽

Cited By ~ 5

Author(s):

B. J. García ◽

C. Fontaine ◽

A. Muñoz‐Yagüe

Keyword(s):

Quantum Wells ◽

Epitaxial Growth ◽

Molecular Beam ◽

Optical Characterization ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)91137-1 ◽

1994 ◽

Vol 145 (1-4) ◽

pp. 746-751 ◽

Cited By ~ 12

Author(s):

J.G. Neff ◽

M.R. Islam ◽

R.V. Chelakara ◽

K.G. Fertitta ◽

F.J. Ciuba ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Wells ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Strained Layer ◽

Metalorganic Chemical

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