Temporal response modeling of metal-semiconductor-metal photodetector

Author(s):  
S. Averine ◽  
Y.C. Chan ◽  
S.L. Ng ◽  
R. Sachot ◽  
Y.L. Lam
1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.


1994 ◽  
Vol 65 (24) ◽  
pp. 3146-3148 ◽  
Author(s):  
J. J. Kuta ◽  
H. M. van Driel ◽  
D. Landheer ◽  
Y. Feng

Ultrasonics ◽  
2018 ◽  
Vol 82 ◽  
pp. 371-378 ◽  
Author(s):  
Dame Fall ◽  
Marc Duquennoy ◽  
Mohammadi Ouaftouh ◽  
Bogdan Piwakowski ◽  
Frederic Jenot

2004 ◽  
Author(s):  
Kate E. Walton ◽  
Brent W. Roberts ◽  
Avshalom Caspi ◽  
Terrie E. Moffitt

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS

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