scholarly journals Selectively excited blue luminescence in heavily Mg doped p-type GaN

2002 ◽  
Author(s):  
J.S. Colton ◽  
P.Y. Yu
Keyword(s):  
Blue Luminescence ◽  
P Type ◽  
Mg Doped

Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

Structural, electrical and optical properties of Mg-doped CuAlO2 films by pulsed laser deposition

RSC Advances ◽  
2014 ◽  
Vol 4 (78) ◽  
pp. 41294-41300 ◽  
Author(s):  
Y. S. Zou ◽  
H. P. Wang ◽  
S. L. Zhang ◽  
D. Lou ◽  
Y. H. Dong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Band Gaps ◽  
Laser Deposition ◽  
Electrical And Optical Properties ◽  
Optical Band Gaps ◽  
P Type ◽  
Enhanced Conductivity ◽  
Mg Doped

P-type Mg doped CuAlO2 films with high crystallinity are prepared by pulsed laser deposition followed by annealing, and exhibit enhanced conductivity and tunable optical band gaps.

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

2015 ◽  
Vol 106 (22) ◽  
pp. 222103 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Erin C. Young ◽  
James S. Speck
Keyword(s):  
Type Conductivity ◽  
P Type ◽  
Mg Doped

Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation

2005 ◽  
Vol 44 (4A) ◽  
pp. 1726-1729 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Zhca-Yong Lai ◽  
Ching-Yuan Wu ◽  
Shoou-Jinn Chang
Keyword(s):  
Nitrogen Plasma ◽  
Type Conductivity ◽  
Plasma Activation ◽  
P Type ◽  
Mg Doped

Investigation of Vacancies in GaN by Positron Annihilation

1996 ◽  
Vol 449 ◽  
Author(s):  
L. V. JØrgensen ◽  
A. C. Kruseman ◽  
H. Schut ◽  
A. Van Veen ◽  
M. Fanciulli ◽  
...  
Keyword(s):  
Positron Beam ◽  
High Resistivity ◽  
S Parameter ◽  
Yield Information ◽  
Beam Analysis ◽  
Core Electrons ◽  
P Type ◽  
Coincidence Measurements ◽  
Higher Sensitivity ◽  
Mg Doped

ABSTRACTPositron beam analysis has been performed on autodoped n-type, semi-insulating and Mg doped p-type epitaxially grown layers of GaN on sapphire. Doppler Broadening measurements clearly indicate the presence of vacancies in the intrinsically autodoped n-type GaN by an increase in the annihilation Doppler lineshape S-parameter of 1.04 relative to the value for the high resistivity sample. This value is typical for vacancy-type defects in compound semiconductors such as GaAs. Results of experiments with higher sensitivity to core-electrons are also presented. These two detector coincidence measurements yield information on the chemical environment surrounding the vacancies. The results are consistent with the presence of Ga vacancies in the autodoped n-type sample.

Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

2020 ◽  
Vol 13 (6) ◽  
pp. 061007 ◽  
Author(s):  
Kazuki Ohnishi ◽  
Yuki Amano ◽  
Naoki Fujimoto ◽  
Shugo Nitta ◽  
Yoshio Honda ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
P Type ◽  
Mg Doped

The blue luminescence of p-type NiO nanostructured material induced by defects: H2S gas sensing characteristics at a relatively low operating temperature

2020 ◽  
Vol 525 ◽  
pp. 146002 ◽  
Author(s):  
Teboho P. Mokoena ◽  
Zamaswazi P. Tshabalala ◽  
Kenneth T. Hillie ◽  
Hendrik C. Swart ◽  
David E. Motaung
Keyword(s):  
Gas Sensing ◽  
Operating Temperature ◽  
Nanostructured Material ◽  
Blue Luminescence ◽  
P Type ◽  
Sensing Characteristics

ChemInform Abstract: Photoelectrochemical Properties of Polycrystalline Mg-Doped p-Type Iron(III) Oxide.

1986 ◽  
Vol 17 (30) ◽  
Author(s):  
A. H. A. TINNEMANS ◽  
T. P. M. KOSTER ◽  
D. H. M. W. THEWISSEN ◽  
A. MACKOR ◽  
J. SCHOONMAN
Keyword(s):  
Photoelectrochemical Properties ◽  
P Type ◽  
Mg Doped

scholarly journals Phosphorus implantation of Mg-doped (Al)GaN heterostructures: structural examination and depth profiling

2020 ◽  
Vol 31 (20) ◽  
pp. 17892-17902
Author(s):  
Karolina Piętak ◽  
Sebastian Złotnik ◽  
Ewelina Rozbiegała ◽  
Paweł P. Michałowski ◽  
Marek Wójcik ◽  
...  
Keyword(s):  
Structural Changes ◽  
Depth Profiling ◽  
Elemental Distribution ◽  
Structural Examination ◽  
Aluminium Gallium Nitride ◽  
Different Temperatures ◽  
P Diffusion ◽  
Bandgap Semiconductors ◽  
P Type ◽  
Mg Doped

AbstractPhosphorus introduction into Mg-doped aluminium gallium nitride ((Al)GaN) epilayers to enhance the acceptor activation is a possible strategy for a p-type conductivity improvement in III-nitride wide-bandgap semiconductors. To date, P-implanted Mg-doped (Al)GaN structures have not been systematically evaluated, regarding structural verification and elemental distribution. Here, comprehensive studies of P ions impact on structural degradation are presented. Furthermore, a post-implantation annealing conducted at different temperatures is examined as well. The results demonstrated that the structural changes in the examined compounds, namely GaN and Al0.1Ga0.9N, due to P implantation and a subsequent recovery by thermal annealing follow similar trends. Interestingly, it was revealed that P diffusion length is higher in AlGaN than in GaN, possibly due to higher oxygen content in Al-containing compounds, analogous to Mg dopant. Additionally, the initial Mg concentration in (Al)GaN is crucial because too high Mg doping could be the main cause of electrical properties degradation of (Al)GaN heterostructures after P ion implantation.

Sign in / Sign up

Export Citation Format

Share Document