Crosstalk noise and signal propagation delay analysis in submicron CMOS integrated circuits

2012 ◽  
Author(s):  
Ahlam Guen Bouazza ◽  
Benyounes Bouazza
Keyword(s):  
Integrated Circuits ◽  
Signal Propagation ◽  
Propagation Delay ◽  
Cmos Integrated Circuits ◽  
Delay Analysis ◽  
Crosstalk Noise ◽  
Submicron Cmos

Optical Failure Analysis Technique in Deep Submicron CMOS Integrated Circuits

2011 ◽  
Vol 11 (4) ◽  
pp. 302-308
Author(s):  
Sunk-Won Kim ◽  
Hyong-Min Lee ◽  
Hyun-Joong Lee ◽  
Jong-Kwan Woo ◽  
Jun-Ho Cheon ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Deep Submicron ◽  
Cmos Integrated Circuits ◽  
Analysis Technique ◽  
Submicron Cmos

Chemical Vapor Deposition of Copper for Advanced On-Chip Interconnects

MRS Bulletin ◽  
1994 ◽  
Vol 19 (8) ◽  
pp. 49-54 ◽  
Author(s):  
A.V. Gelatos ◽  
A. Jain ◽  
R. Marsh ◽  
C.J. Mogab
Keyword(s):  
Integrated Circuits ◽  
Chemical Vapor ◽  
Signal Propagation ◽  
Propagation Delay ◽  
Atomic Weight ◽  
Channel Length ◽  
Transistor Channel ◽  
On Chip ◽  
Current Carrying Capability ◽  
Year 2000

Continued dimensional scaling of the elements of integrated circuits places significant restrictions on the width, density, and current carrying capability of metallic interconnects. It is expected that, by the year 2000, the transistor channel length will be at 0.18 μm, while microprocessors will pack more than 15 million transistors over an area ~700 mm. To conserve area, interconnects will continue to be stacked at an increasing number of levels (six by the year 2000, versus four in today's leading microprocessors), and the minimum spacing and width within an interconnect layer will shrink to 0.3 μm. In addition, it is expected that future interconnects will need to sustain increasingly higher current densities without electromigration failures.Aluminum alloys are the conductors of choice in present-day interconnects, and much effort is focused on means to extend the usefulness of aluminum through improvements in reliability, either by new alloy formulations or by the development of complicated multimetal stacks. A more radical approach, which is gaining increased attention, is the replacement of aluminum altogether by copper. The bulk resistivity of copper is significantly lower than that of aluminum (1.7 μΩ cm for Cu versus 3.0 μΩ cm for Al-Cu), which is expected to translate to interconnects of higher performance because of reduction in signal propagation delay. In addition, the significantly higher melting temperature of copper (~1100°C versus ~600°C for Al-Cu alloys) and its higher atomic weight are expected to translate to improved resistance to electromigration.

Materials Issues and Characterization of Low-k Dielectric Materials

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho
Keyword(s):  
Process Integration ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Thermomechanical Properties ◽  
General Criterion ◽  
Crosstalk Noise ◽  
Total Delay ◽  
Interlayer Dielectrics ◽  
Performance Improvements ◽  
And Performance

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

scholarly journals A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Xiaoshi Jin ◽  
Yicheng Wang ◽  
Kailu Ma ◽  
Meile Wu ◽  
Xi Liu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Structural Parameters ◽  
Cmos Integrated Circuits ◽  
Region Length ◽  
Internal Mechanism ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Switching Characteristics

AbstractA bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g., the doping concentrations of the N+ region and P+ region, length of the N+ region and length of the intrinsic region, on the device performances, e.g., the transfer characteristics, Ion–Ioff ratio and subthreshold swing, and the internal mechanism are discussed and explained in detail.

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