Growth of very large grains in polycrystalline silicon thin films by the sequential combination of vapor induced crystallization using AlCl3 and pulsed rapid thermal annealing

2012 ◽  
Vol 12 (6) ◽  
pp. 1454-1458 ◽  
Author(s):  
Kyung Min Ahn ◽  
Seung Mo Kang ◽  
Byung Tae Ahn
2008 ◽  
Vol 24 (09) ◽  
pp. 1689-1693
Author(s):  
WANG Shuo ◽  
◽  
◽  
LUO Chong ◽  
ZHAO Ying ◽  
...  

1987 ◽  
Vol 103 ◽  
Author(s):  
Menachem Nathan

ABSTRACTA general scheme for determining which metal-Si systems undergo solidphase amorphization (SPA) upon rapid thermal annealing is presented and used to investigate Ni-Si, Ti-Si, V-Si, Co-Si and Cr-Si reactions. SPA occurs only in the first three systems. With the glaring exception of Co-Si, the results agree with the thermodynamic predictions of SPA in systems in which the free energy of a glassy phase is significantly lower than the free energy of the separate components. The amorphization may also be influenced by the diffusing species and contamination. Following SPA, the first crystalline compound is determined by nucleation kinetics.


2012 ◽  
Vol 12 (6) ◽  
pp. 1470-1475 ◽  
Author(s):  
Shanglong Peng ◽  
Na Feng ◽  
Duokai Hu ◽  
Deyan He ◽  
Chang-Woo Byun ◽  
...  

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