Characterization of the TiW‐GaAs interface after rapid thermal annealing

1989 ◽  
Vol 66 (10) ◽  
pp. 4775-4779 ◽  
Author(s):  
M. de Potter ◽  
W. De Raedt ◽  
M. Van Hove ◽  
G. Zou ◽  
H. Bender ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Characterization of Ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing

1999 ◽  
Vol 144-145 ◽  
pp. 697-701 ◽  
Author(s):  
W.K Choi ◽  
S Kanakaraju ◽  
Z.X Shen ◽  
W.S Li
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ge Nanocrystals

Micro-Raman characterization of Ge diffusion and Si stress change in thin epitaxial Si1−xGex layers on Si(100) after rapid thermal annealing

2012 ◽  
Vol 27 (9) ◽  
pp. 1314-1323 ◽  
Author(s):  
Chun-Wei Chang ◽  
Min-Hao Hong ◽  
Wei-Fan Lee ◽  
Kuan-Ching Lee ◽  
Li-De Tseng ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Stress Change ◽  
Image Position ◽  
Raman Characterization

Abstract

DLTS Characterization of N-Type Silicon After Rapid Thermal Annealing of Boron Implantation

1985 ◽  
Vol 52 ◽  
Author(s):  
C. M. Ransom ◽  
T. O. Sedgwick ◽  
S. A. Cohen
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diode ◽  
Electron Traps ◽  
Majority Carrier ◽  
Type Silicon ◽  
Isochronal Anneal ◽  
Boron Implantation ◽  
Carrier Traps

ABSTRACTDLTS measurements show that majority-carrier traps exist after quartz-lamp, rapid-thermal annealing (RTA) activation of B+ and BF2+ ion implants in n-type silicon. Levels at Ec-0.17, 0.27, 0.44 and 0.57 eV annealed out with an additional 20 minute isochronal anneal at 550°C in argon. A stable defect at 0.37 eV existed at temperatures above 750°C. DLTS measurements of a Schottky diode on n-type silicon after only RTA indicated that electron traps could be introduced into n-type silicon by the RTA alone.

Micro-Raman Characterization of Cluster Carbon Implanted Si before and after Rapid Thermal Annealing

2016 ◽  
Vol 75 (8) ◽  
pp. 605-613
Author(s):  
W. S. Yoo ◽  
K. Kang ◽  
H. Nishigaki ◽  
N. Hasuike ◽  
H. Harima ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Before And After ◽  
Raman Characterization

Characterization of Ti:LiNbo3 Optical Channel Waveguides Fabricated using Rapid Thermal Annealing

1989 ◽  
Vol 152 ◽  
Author(s):  
Uma Ramabadran ◽  
Gregory N. De Brabander ◽  
Joseph T. Boyd ◽  
Howard E. Jackson ◽  
S. Sriram
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Optical Channel ◽  
Preliminary Results ◽  
Raman Microprobe ◽  
Channel Waveguides ◽  
Raman Response

ABSTRACTRapid thermal annealing has been used to initiate diffusion of Ti in LiNbO3 for the fabrication of optical waveguides. The sample with the most rapid initial ramp of temperature to 875 C was found to have the lowest propagation loss of 1 dB/cm. In order to more fully understand these channel waveguides, we have utilized Raman microprobe spectroscopy. Preliminary results suggest that the presence of the Ti in the LiNbO3 lattice dramatically alters the Raman response.

Electrical and Material Characterization of the Stability of ALGaAs and GaAs Planar Doped Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Larry P. Sadwick ◽  
Dwight C. Streit
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Doping Profile ◽  
Charge Densities ◽  
Diode Ideality Factor ◽  
Sheet Charge ◽  
The Stability ◽  
Silicon Sheet

AbstractIn this work we have studied the effects of silicon planar doping on the electrical and optical properties of GaAs, and the effects of rapid thermal annealing on AIGaAs planar-doped structures. MBE-grown GaAs epilayers with multiple planar-doped layers displayed a 1.2 eV photoluminescence peak, presumably due to gallium vacancy - donor complexes, for samples with nominal silicon sheet densities much greater than measured charge densities. The Hall mobilities of these samples were also reduced compared to both uniformly-doped and planar-doped structures whose silicon areal densities were more nearly equal to measured sheet charge densities, although X-Ray rocking curves were nearly identical in all cases. Planar-doped AIGaAs Schottky diodes had nearly ideal electrical characteristics. Rapid thermal annealing of the planar-doped structures before fabrication increased the diode ideality factor from n=1.06 to n=1.60, seriously degraded the saturation current and breakdown voltage, and increased the doping profile FWHM from 60Å to 170Å.

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