Highly Active Junctions Formed in Crystalline Silicon by Infrared Laser Annealing

2007 ◽  
Author(s):  
Giovanni Mannino ◽  
Antonino La Magna ◽  
Vittorio Privitera ◽  
Jens S. Christensen ◽  
Lasse Vines ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Crystalline Silicon ◽  
Infrared Laser ◽  
Highly Active

Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation

2007 ◽  
Vol 46 (1) ◽  
pp. 21-23 ◽  
Author(s):  
Norihito Kawaguchi ◽  
Ryusuke Kawakami ◽  
Ken-ichiro Nishida ◽  
Naoya Yamamoto ◽  
Miyuki Masaki ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Green Laser ◽  
Single Crystalline Silicon ◽  
Single Crystalline

scholarly journals Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties

2016 ◽  
Vol 119 (16) ◽  
pp. 165305 ◽  
Author(s):  
Brian J. Simonds ◽  
Sudhajit Misra ◽  
Naba Paudel ◽  
Koen Vandewal ◽  
Alberto Salleo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Near Infrared ◽  
Laser Annealing ◽  
Infrared Laser ◽  
In Situ Measurement ◽  
Structural And Optical Properties

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Real Time Monitoring Of The Optical Properties Of Cw Laser Annealed Silicon

1980 ◽  
Vol 1 ◽  
Author(s):  
John F. Ready ◽  
B. Thompson Mcclure ◽  
Terry L. Brewer ◽  
William L. Larson
Keyword(s):  
Laser Beam ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
Past History ◽  
Implantation Dose ◽  
Oscillatory Behavior ◽  
Index Of Refraction ◽  
Destructive Interference ◽  
History Of ◽  
Surface Reflectivity

ABSTRACTThe surface reflectivity of ion implanted silicon is a function of the entire past history of the material, including the nature of the implanted species and the implant dose. It is influenced by interference effects, arising from discontinuities in index of refraction at the surface and at the boundary between damaged and undamaged material. The reflectivity may be either higher or lower than that of the unimplanted silicon. As the crystalline silicon regrows from below, the reflectivity changes because of variable constructive or destructive interference. This paper describes monitoring of the surface reflectivity during continuous laser annealing. The beam from a continuous argon ion laser is scanned in a raster pattern over the silicon surface. The surface reflectivity for a HeNe laser beam is monitored as a function of time during crystalline regrowth. The reflectivity contains an oscillatory component which arises because of changes in interference due to the decreasing thickness of the noncrystalline layer. The oscillatory behavior produces a signature characteristic of the annealing. The reflectivity monitoring technique is useful for investigating the influence of parameters such as the spatial profile of the laser beam and the implantation dose on the annealing characteristics. The results are correlated with measurements of the depth profile of the implanted ions, as revealed by anodic oxidation and stripping.

cw infrared laser annealing of ion‐implanted silicon

1979 ◽  
Vol 50 (11) ◽  
pp. 7264-7266 ◽  
Author(s):  
G. K. Celler ◽  
J. M. Poate ◽  
G. A. Rozgonyi ◽  
T. T. Sheng
Keyword(s):  
Laser Annealing ◽  
Infrared Laser ◽  
Ion Implanted

Femtosecond infrared laser annealing of ferroelectric PZT films on a metal substrate

2012 ◽  
Author(s):  
N. Yu. Firsova ◽  
E. D. Mishina ◽  
S. V. Senkevich ◽  
I. P. Pronin ◽  
I. K. Bdikin ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Infrared Laser ◽  
Metal Substrate ◽  
Pzt Films

Pulsed Laser Annealing Effects in High Dose Rate Silicon Implants

1980 ◽  
Vol 1 ◽  
Author(s):  
J.S. Williams ◽  
A. P. Pogany ◽  
D. G. Beanland ◽  
D. J. Chivers ◽  
M. J. Kenny ◽  
...  
Keyword(s):  
Dose Rate ◽  
Laser Power ◽  
Laser Annealing ◽  
Crystalline Silicon ◽  
High Dose Rate ◽  
Threshold Power ◽  
High Dose ◽  
Electrical Measurements ◽  
Pulsed Laser Annealing ◽  
Annealing Effects

ABSTRACTHigh resolution Rutherford backscattering and channelling TEM and electrical measurements have been employed to investigate pulsed-ruby laser annealing effects in high dose rate ion implanted silicon wafers. The laterally non-uniform, part amorphous, part crystalline disordered structure which can result from high dose rate implants has been utilized to investigate the selective removal of amorphous or crystalline damage at near-threshold laser powers. Evidence is found for preferrential recrystallisation of amorphous damage regions over a broad laser power window which is below the threshold power required to melt adjacent crystalline silicon. At laser power levels above the crystalline-to-melt threshold, excellent uniformity in damage removal and electrical properties were obtained over the entire wafer.

Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing

2005 ◽  
Vol 108-109 ◽  
pp. 211-216
Author(s):  
Yue Ma ◽  
Yue Long Huang ◽  
Reinhart Job ◽  
Wolfgang Düngen ◽  
Wolfgang R. Fahrner
Keyword(s):  
Laser Annealing ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Basic Mechanism ◽  
Hydrogen Atoms ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
First Order Kinetics ◽  
Boron Doped

Boron doped [100]-oriented Cz Si wafers are hydrogenated with a plasma enhanced chemical vapor deposition setup at a substrate temperature of about 260 °C. In-situ Raman spectroscopy is applied on samples under thermal and laser annealing. It is found that different Si-H species have different stabilities. The most stable one is the Si-H bond at the inner surfaces of the platelets. The dissociated energy of Si-H bonds is deduced based on the first order kinetics. It is found that the hydrogen atoms which are released during annealing are trapped again by the platelets and passivate the silicon dangling bonds at the inner surfaces of the platelets or form H2 molecules in the open platelet volume, possibly relating to the basic mechanism of the hydrogen-induced exfoliation of the silicon wafer and the socalled “smart-cut” process.

Pulsed infrared laser annealing of gold nanoparticles embedded in a silica matrix

2008 ◽  
Vol 103 (8) ◽  
pp. 083545 ◽  
Author(s):  
A. Halabica ◽  
J. C. Idrobo ◽  
S. T. Pantelides ◽  
R. H. Magruder ◽  
S. J. Pennycook ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Laser Annealing ◽  
Infrared Laser ◽  
Silica Matrix
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