Microwave Annealing for Low Temperature Activation of As in Si

2007 ◽  
Author(s):  
Jeff M. Kowalski ◽  
Jeff E. Kowalski ◽  
Bo Lojek
Keyword(s):  
Low Temperature ◽  
Microwave Annealing ◽  
Temperature Activation

Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review

2014 ◽  
Vol 61 (3) ◽  
pp. 651-665 ◽  
Author(s):  
Yao-Jen Lee ◽  
Ta-Chun Cho ◽  
Shang-Shiun Chuang ◽  
Fu-Kuo Hsueh ◽  
Yu-Lun Lu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Annealing

Low-temperature soluble InZnO thin film transistors by microwave annealing

2011 ◽  
Vol 326 (1) ◽  
pp. 23-27 ◽  
Author(s):  
Keunkyu Song ◽  
Chang Young Koo ◽  
Taehwan Jun ◽  
Daehee Lee ◽  
Youngmin Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microwave Annealing

Low‐Temperature Activation and Recrystallization of B+‐ and  BF 2  +  ‐ Implanted LPCVD Amorphous‐Si Films

1995 ◽  
Vol 142 (10) ◽  
pp. 3574-3578 ◽  
Author(s):  
Huang‐Chung Cheng ◽  
Fang‐Shing Wang ◽  
Yeong‐Fang Huang ◽  
Chun‐Yao Huang ◽  
Meng‐Jin Tsai
Keyword(s):  
Low Temperature ◽  
Amorphous Si ◽  
Temperature Activation ◽  
Si Films

scholarly journals Low temperature activation of inert hexagonal boron nitride for metal deposition and single atom catalysis

2021 ◽  
Author(s):  
Yu Lei ◽  
Srimanta Pakhira ◽  
Kazunori Fujisawa ◽  
He Liu ◽  
Cynthia Guerrero-Bermea ◽  
...  
Keyword(s):  
Low Temperature ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Metal Deposition ◽  
Single Atom ◽  
Temperature Activation

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

scholarly journals Low-temperature activation of carbon black by selective photocatalytic oxidation

2019 ◽  
Vol 1 (8) ◽  
pp. 2873-2880 ◽  
Author(s):  
Niels R. Ostyn ◽  
Julian A. Steele ◽  
Michiel De Prins ◽  
Sreeprasanth Pulinthanathu Sree ◽  
C. Vinod Chandran ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carbon Black ◽  
Amorphous Carbon ◽  
Photocatalytic Oxidation ◽  
Graphitic Carbon ◽  
Carbon Fraction ◽  
Temperature Activation

Carbon black is chemically activated by selective TiO2 photocatalytic oxidation functionalizing the graphitic carbon fraction, while mineralizing amorphous carbon.

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Low-temperature activation of methane on doped single atoms: descriptor and prediction

2018 ◽  
Vol 20 (35) ◽  
pp. 22909-22914 ◽  
Author(s):  
Victor Fung ◽  
Franklin (Feng) Tao ◽  
De-en Jiang
Keyword(s):  
Low Temperature ◽  
Low Temperatures ◽  
Single Atoms ◽  
Temperature Activation

We predict that Pt and several other single atoms on rutile TiO2(110) can chemisorb and activate methane at low temperatures.

Resistance Decrease of Phosphorus Ion Implanted Poly-Si Thin Films During Low Temperature Annealing

1995 ◽  
Vol 403 ◽  
Author(s):  
H. Tokioka ◽  
Y. Masutani ◽  
Y. Goto ◽  
S. Nagao ◽  
H. Kurokawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Layer Thickness ◽  
Sheet Resistance ◽  
Lower Layer ◽  
Low Temperature Annealing ◽  
Two Layer Model ◽  
Temperature Activation ◽  
Resistance Decrease ◽  
Ellipsometry Data

AbstractDuring low temperature (below 450°C) annealing, the sheet resistance of phosphorus implanted poly-Si thin films (film thickness : 50nm) decreased to lE+3Ω/square. The sheet resistance after annealing decreased with annealing time and became lower when the dosing level was high enough. At the dose of 8E+14 ions/cm2 we obtained a sheet resistance of 1E+3Q/square by annealing at 450°C for 180min. We analyzed ellipsometry data assuming a two-layer model where the surface layer consists of a-Si and the lower layer of poly-Si. This analysis indicated that the surface of implanted films was amorphized by ion implantation and the amorphized layer thickness increased with dosing level. Also, it turned out that the lower poly-Si layer thickness increased from 30nm to 50nm after annealing accompanied by the conversion of a-Si layer to poly-Si layer. During annealing at low temperature, activation of phosphorus ions implanted into poly-Si and recrystallization of a-Si took place simultaneously and the sheet resistance after annealing decreased with the increase in thickness of the recrystallized region.

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