Impact of NI Layer Thickness and Anneal Time on Nickel Silicide Formation by Rapid Thermal Processing

2006 ◽  
Author(s):  
T. Huelsmann ◽  
J. Niess ◽  
W. Lerch ◽  
O. Fursenko ◽  
D. Bolze
Keyword(s):  
Layer Thickness ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Silicide Formation ◽  
Anneal Time

Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers

2002 ◽  
Vol 745 ◽  
Author(s):  
Erik Haralson ◽  
Tobias Jarmar ◽  
Johan Seger ◽  
Henry H. Radamson ◽  
Shi-Li Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lateral Diffusion ◽  
Lateral Growth ◽  
Silicide Formation ◽  
Diffusion Couples ◽  
Planar Configuration ◽  
20 Nm

ABSTRACTThe reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thick Si1-x-yGexCy, NiSi1-xGex(C) forms at 450°C on either Si0.82Ge0.18 or Si0.818Ge0.18C0.002, comparable to NiSi formed on Si. However, the agglomeration of NiSi1-xGex(C) on Si0.818Ge0.18C0.002 occurs at 625°C, about 50°C higher than that of NiSi1-xGex on Si0.82Ge0.18. For thin-film lateral diffusion couples, a 200-nm thick Ni film was in contact with 80–130 nm thick Si1-x-yGexCy through 1–10 μm sized contact openings in a 170 nm thick SiO2 isolation. While the Ni3Si phase was formed for both the Si0.82Ge0.18 and Si0.818Ge0.18C0.002 samples, the presence of 0.2 at.% C caused a slightly slower lateral growth.

In-process control of silicide formation during rapid thermal processing

1993 ◽  
Vol 63 (1-4) ◽  
pp. 131-134 ◽  
Author(s):  
J.-M. Dilhac ◽  
C. Ganibal ◽  
N. Nolhier ◽  
P.B. Moynagh ◽  
C.P. Chew ◽  
...  
Keyword(s):  
Process Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation

A parametric study of titanium silicide formation by rapid thermal processing

1996 ◽  
Vol 11 (2) ◽  
pp. 412-421 ◽  
Author(s):  
A. V. Amorsolo ◽  
P. D. Funkenbusch ◽  
A. M. Kadin
Keyword(s):  
Sheet Resistance ◽  
Parametric Study ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Wet Etching ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Sputter Etching

A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.

The Control and Impact of Processing Ambient During RTP

1998 ◽  
Vol 514 ◽  
Author(s):  
Karen Maex ◽  
Eiichi Kondoh ◽  
Anne Lauwers ◽  
Muriel DePotter ◽  
Joris Prost
Keyword(s):  
Thermal Processing ◽  
Thermal Process ◽  
Rapid Thermal Processing ◽  
Process Window ◽  
Temperature Uniformity ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Set Up ◽  
Interconnect Technology

ABSTRACTThe introduction of rapid thermal processing for silicide formation has triggered a lot of research to temperature uniformity and reproducibility in RTP systems. From the other side there has been the demand to make the process itself as robust as possible for temperature variations. Indeed the way the module is set up can open or close the thermal process window for silicidation. In addition to the temperature, the ambient control is to be taken into account. Although gasses are specified to a low level of contaminants, the RTP step needs to be optimized for optimal contaminant reduction. Besides, the process wafer itself can be a source of contamination. In this paper an overview will be given of the role of temperature and ambient during RTP on the silicidation processes. The effect of the wafer on ambient purity will be highlighted. It will be shown that the latter can also have an impact on other process steps in the interconnect technology.

Kinetics of platinum silicide formation during rapid thermal processing

1992 ◽  
Vol 72 (5) ◽  
pp. 1833-1836 ◽  
Author(s):  
A. K. Pant ◽  
S. P. Murarka ◽  
C. Shepard ◽  
W. Lanford
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicide Formation ◽  
Platinum Silicide ◽  
Kinetics Of

scholarly journals Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

2018 ◽  
Vol 924 ◽  
pp. 389-392 ◽  
Author(s):  
Mattias Ekström ◽  
Shuoben Hou ◽  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Rapid Thermal Processing ◽  
Nickel Silicide ◽  
Second Step ◽  
Low Resistance ◽  
Annealing Step ◽  
P Type

Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.

Control and Impact of Processing Ambient During Rapid Thermal Silicidation

1998 ◽  
Vol 525 ◽  
Author(s):  
K. Maex ◽  
E. Kondoh ◽  
A. Lauwers ◽  
A. Steegen ◽  
M. De Potter ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Silicide Formation ◽  
Capping Layer ◽  
Low Level ◽  
Reactive Capping ◽  
Sources Of Contamination

ABSTRACTThe introduction of rapid thermal processing for silicide formation has triggered a lot of research to temperature uniformity and reproducibility in RTP systems. In addition to the temperature, the ambient control is to be taken into account. Although gasses are specified to a low level of contaminants, the RTP step needs to be optimised for optimal contaminant reduction. Besides, the process wafer itself is a source of contamination.In this paper an overview will be given of the role of RTP ambient on the silicidation processes. The effect of the wafer on ambient purity will be highlighted. It will be shown that the use of a reactive capping layer during silicidation represents an adequate solution for both sources of contamination.

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