Influence of the Atmosphere on Ultra - Thin Oxynitride Film for Precisely Controled Plasma Nitridation Process

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors ◽

10.1109/rtp.2006.367977 ◽

2006 ◽

Author(s):

K. Saki ◽

M. Tamaoki ◽

T. Shimizu ◽

S. Ito ◽

S. Mori ◽

...

Keyword(s):

Plasma Nitridation ◽

Nitridation Process ◽

Oxynitride Film

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Plasma nitridation process for the fabrication of all‐refractory Josephson junctions

Journal of Applied Physics ◽

10.1063/1.345432 ◽

1990 ◽

Vol 67 (6) ◽

pp. 3038-3042 ◽

Cited By ~ 22

Author(s):

R. Cantor ◽

D. Drung ◽

M. Peters ◽

H. Koch

Keyword(s):

Josephson Junctions ◽

Plasma Nitridation ◽

Nitridation Process

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The Improvement Effect of the Plasma Nitridation Process to the Reliability of the HfO2 thinfilms

ECS Meeting Abstracts ◽

10.1149/ma2009-01/19/803 ◽

2009 ◽

Keyword(s):

Plasma Nitridation ◽

Nitridation Process ◽

Improvement Effect

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The Improvement Effect of the Plasma Nitridation Process to the Reliability of HfO2 Thin Films

ECS Transactions ◽

10.1149/1.3122132 ◽

2019 ◽

Vol 19 (2) ◽

pp. 773-784

Author(s):

Kow-Ming Chang ◽

Bwo-Ning Chen ◽

Chun-Kai Tang

Keyword(s):

Thin Films ◽

Plasma Nitridation ◽

Nitridation Process ◽

Improvement Effect

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Comparison of equivalent oxide thickness and electrical properties of atomic layer deposited hafnium zirconate dielectrics with thermal or decoupled plasma nitridation process

Electronic Materials Letters ◽

10.1007/s13391-012-2030-1 ◽

2012 ◽

Vol 8 (5) ◽

pp. 535-539 ◽

Cited By ~ 4

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer ◽

Oxide Thickness ◽

Equivalent Oxide Thickness ◽

Plasma Nitridation ◽

Nitridation Process

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Plasma nitridation process for superconducting Nb wiring to improve their annealing stability

Journal of Applied Physics ◽

10.1063/1.349823 ◽

1991 ◽

Vol 70 (11) ◽

pp. 6958-6965 ◽

Cited By ~ 16

Author(s):

Tetsuyoshi Shiota ◽

Takeshi Imamura ◽

Shinya Hasuo

Keyword(s):

Plasma Nitridation ◽

Nitridation Process

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Direct measurement of gate oxide damage from plasma nitridation process

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200939 ◽

2003 ◽

Author(s):

Y. Jin ◽

C.-C. Chen ◽

V.S. Chang ◽

D.-Y. Leel ◽

T.-L. Lee ◽

...

Keyword(s):

Direct Measurement ◽

Gate Oxide ◽

Plasma Nitridation ◽

Nitridation Process ◽

Oxide Damage

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Effects of plasma-induced damage to ultrathin (≤1.5 nm) gate dielectric on equivalent oxide thickness downscaling using plasma nitridation process

2003 8th International Symposium Plasma- and Process-Induced Damage. ◽

10.1109/ppid.2003.1200940 ◽

2003 ◽

Cited By ~ 1

Author(s):

V.S. Chang ◽

C.-C. Chen ◽

C.-L. Wu ◽

D.-Y. Lee ◽

T.-L. Lee ◽

...

Keyword(s):

Gate Dielectric ◽

Oxide Thickness ◽

Equivalent Oxide Thickness ◽

Plasma Nitridation ◽

Nitridation Process

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Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes

MRS Proceedings ◽

10.1557/proc-0917-e01-02 ◽

2006 ◽

Vol 917 ◽

Cited By ~ 1

Author(s):

Takuya Sugawara ◽

Raghavasimhan Sreenivasan ◽

Paul C. McIntyre

Keyword(s):

Substrate Temperature ◽

Nitrogen Concentration ◽

Plasma Chemistry ◽

Nitrogen Plasma ◽

Reactive Species ◽

Silicon Substrates ◽

Plasma Nitridation ◽

Nitridation Process ◽

Germanium Substrate ◽

Nitrogen Reactive Species

AbstractRoles of reactive species of germanium and silicon plasma nitridation were investigated by comparing nitrogen plasma chemistry and oxynitride layer physical properties. In high pressure remote plasma nitridation process, hydrogen containing neutral radicals (NH* and H*) were important to nitride germanium and silicon substrates. This process required high substrate temperature to nitride germanium substrate, whereas silicon substrates could be nitrided at low substrate temperature. In low pressure RLSA plasma nitridation process, N2+ ion species acted as dominant reactive species. Using this process, germanium could be nitrided at low substrate temperature without hydrogen and high nitrogen concentration (~22at.%) GeON was obtained.

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