The Improvement Effect of the Plasma Nitridation Process to the Reliability of HfO2 Thin Films

2019 ◽  
Vol 19 (2) ◽  
pp. 773-784
Author(s):  
Kow-Ming Chang ◽  
Bwo-Ning Chen ◽  
Chun-Kai Tang
Keyword(s):  
Thin Films ◽  
Plasma Nitridation ◽  
Nitridation Process ◽  
Improvement Effect

scholarly journals Preparation of High-Transparency, Superhydrophilic Visible Photo-Induced Photocatalytic Film via a Rapid Plasma-Modification Process

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 784
Author(s):  
Bing-Jyh Lu ◽  
Keng-Ta Lin ◽  
Yi-Ming Kuo ◽  
Cheng-Hsien Tsai
Keyword(s):  
Thin Films ◽  
Visible Light ◽  
Light Irradiation ◽  
Light Transmittance ◽  
Plasma Modification ◽  
Pencil Hardness ◽  
Doped Tio2 ◽  
Sio2 Films ◽  
Plasma Nitridation ◽  
Nitridation Process

In this study, different amounts of SiO2 nanoparticles (7 nm) were added to simultaneously reach high transmittance, high hardness, and high adhesion for TiO2 film prepared by the sol–gel method and coated on glass through a dip-coating technique. For the film to achieve self-cleaning, anti-fogging, superhydrophilicity, and visible photo-induced photocatalysis, TiO2-SiO2 film was modified via a rapid microwave plasma-nitridation process for efficient N-doping by various N2-containing gases (N2, N2/Ar/O2, N2/Ar). Through nitrogen plasma, the content of N atom reached 1.3% with the ratio of O/Ti atom being 2.04. The surface of the thin films was smooth, homogeneous, and did not crack, demonstrated by the root mean square (RMS) roughness of film surface being 3.29–3.94 nm. In addition, the films were composed of nanoparticles smaller than 10 nm, with a thickness of about 100 nm, as well as the crystal phase of the thin film being anatase. After the plasma-nitridation process, the visible-light transmittance of N-doped TiO2-SiO2 films was 89.7% (clean glass = 90.1%). Moreover, the anti-fogging ability was excellent (contact angle < 5°) even without light irradiation. The degradation of methylene blue showed that the photocatalytic performance of N-doped TiO2-SiO2 films was apparently superior to that of unmodified films under visible-light irradiation. Moreover, the pencil hardness and adhesion rating test of the thin films were 7H and 5B, respectively, indicating that the obtained coatings had great mechanical stability.

Plasma nitridation process for the fabrication of all‐refractory Josephson junctions

1990 ◽  
Vol 67 (6) ◽  
pp. 3038-3042 ◽  
Author(s):  
R. Cantor ◽  
D. Drung ◽  
M. Peters ◽  
H. Koch
Keyword(s):  
Josephson Junctions ◽  
Plasma Nitridation ◽  
Nitridation Process

scholarly journals Preparation of nitrogen doped zinc oxide nanoparticles and thin films by colloidal route and low temperature nitridation process

2016 ◽  
Vol 54 ◽  
pp. 30-36 ◽  
Author(s):  
Arnaud Valour ◽  
François Cheviré ◽  
Franck Tessier ◽  
Fabien Grasset ◽  
Benjamin Dierre ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Zinc Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Nitrogen Doped ◽  
Nitridation Process

An in Situ Transmission Electron Microscopy Study During NH3 Ambient Annealing of Cu-Cr Thin Films

1993 ◽  
Vol 317 ◽  
Author(s):  
Z. Atzmon ◽  
R. Sharma ◽  
J.W. Mayer ◽  
S.Q. Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Nitridation Process ◽  
Transmission Electron ◽  
Heat Treated

ABSTRACTNitridation of Cu-Cr alloy films under an NH3 ambient was studied using in situ transmission electron Microscopy. Cu-Cr thin films (40–100 nm) were deposited on a single crystal NaCl substrate by electron beam coevaporation, and were heat treated up to 750°C at 2.5–3.0 Torr NH3. The films were also vacuum (10-6 Torr) annealed under the same conditions for comparison. Initial observation of Cu and Cr crystallization occurred at 470°C for both environmental conditions. The nitridation process of Cr to form CrN was observed initially at 580°C and was followed by evolution of faceted Cu grain growth in the CrN Matrix.

Plasma nitridation and microstructure of high-k ZrO2 thin films fabricated by cathodic arc deposition

2005 ◽  
Vol 277 (1-4) ◽  
pp. 422-427 ◽  
Author(s):  
A.P. Huang ◽  
Ricky K.Y. Fu ◽  
Paul K. Chu ◽  
L. Wang ◽  
W.Y. Cheung ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Nitridation ◽  
Cathodic Arc Deposition ◽  
High K ◽  
Cathodic Arc ◽  
Arc Deposition
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