Advances in laser annealing technology for poly-Si material engineering and ultra-high-performance device fabrication

2003 ◽  
Author(s):  
A.T. Voutsas
Keyword(s):  
High Performance ◽  
Laser Annealing ◽  
Device Fabrication ◽  
Material Engineering

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

scholarly journals A Unified Model to Explain the Large Chiroptical Effects in Polymer Systems Through Natural Optical Activity

2020 ◽  
Author(s):  
Jess Wade ◽  
James Hilfiker ◽  
Jochen Brandt ◽  
Letizia Liirò-Peluso ◽  
Li Wan ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Activity ◽  
High Performance ◽  
Dipole Moments ◽  
Magnetic Transition ◽  
Polymer Thin Films ◽  
Device Fabrication ◽  
Local Order ◽  
Transition Dipole ◽  
Technological Advances

<div><div><div><p>Polymer thin films that emit and absorb circularly polarised light have been demonstrated with the promise of achieving important technological advances; from efficient, high-performance displays, to 3D imaging and all-organic spintronic devices. However, the origin of the large chiroptical effects in such films has, until now, remained elusive. We investigate the emergence of such phenomena in achiral polymers blended with a chiral small-molecule additive (1-aza[6]helicene) and intrinsically chiral-sidechain polymers using a combination of spectroscopic methods and structural probes. We show that – under conditions relevant for device fabrication – the large chiroptical effects are caused by coupling of electric and magnetic transition dipole moments (natural optical activity), not structural chirality as previously assumed, and may occur because of local order in a cylinder blue phase-type organisation. This disruptive mechanistic insight into chiral polymer thin films will offer new approaches towards chiroptical materials development after almost three decades of research in this area.</p></div></div></div>

scholarly journals Applications of laser annealing in silicon device fabrication

1981 ◽  
Author(s):  
L. D. Hess ◽  
S. A. Kokorowski ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Device Fabrication ◽  
Silicon Device

scholarly journals High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1067 ◽  
Author(s):  
Hafiz Muhammad Salman Ajmal ◽  
Fasihullah Khan ◽  
Noor Ul Huda ◽  
Sunjung Lee ◽  
Kiyun Nam ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Electronic Device ◽  
Deep Level ◽  
Zno Nanorods ◽  
Ultra Violet ◽  
Device Fabrication ◽  
Electrode Structure ◽  
Large Area ◽  
X Ray

As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.

Excimer laser annealing system for AMLCDs: a long laser pulse for high-performance, uniform, and stable TFT

2001 ◽  
Author(s):  
Christophe Prat ◽  
Dorian Zahorski ◽  
Youri Helen ◽  
Taieb Mohammed-Brahim ◽  
Olivier Bonnaud
Keyword(s):  
Laser Pulse ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing
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