Excimer laser annealing system for AMLCDs: a long laser pulse for high-performance, uniform, and stable TFT

2001 ◽  
Author(s):  
Christophe Prat ◽  
Dorian Zahorski ◽  
Youri Helen ◽  
Taieb Mohammed-Brahim ◽  
Olivier Bonnaud
Keyword(s):  
Laser Pulse ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing

2015 ◽  
Vol 27 (14) ◽  
pp. 1485-1488 ◽  
Author(s):  
Chen Wang ◽  
Cheng Li ◽  
Jiangbin Wei ◽  
Guangyang Lin ◽  
Xiaoling Lan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing

High-Performance Poly-Si TFTs with Multiple Selectively Doped Regions in the Active Layer

2000 ◽  
Vol 621 ◽  
Author(s):  
Min-Cheol Lee ◽  
Juhn-Suk Yoo ◽  
Kee-Chan Park ◽  
Sang-Hoon Jung ◽  
Min-Koo Han ◽  
...  
Keyword(s):  
Leakage Current ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Channel Length ◽  
Depletion Region ◽  
Excimer Laser Annealing ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Excimer Laser Irradiation

ABSTRACTWe have proposed and fabricated a new poly-Si TFT that employs selectively doped regions between the source and drain in order to reduce leakage current without the sacrifice of the on current. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of source/drain, reduce the effective channel length during the on state. Under the off state, the selectively doped regions may reduce the lateral electric field induced in the depletion region near drain so that the leakage current reduces considerably. The experimental data of the proposed TFT shows that it has the high on-current, low leakage current and low threshold voltage when compared with conventional TFT. The fabrication steps for the proposed TFT are reduced because ion-implantation for source/drain and selectively doped regions is performed simultaneously prior to an excimer laser irradiation. It should be noted that, in the proposed TFT, only one excimer laser annealing is required while two excimer laser annealing steps are required in conventional TFT.

Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

2013 ◽  
Vol 811 ◽  
pp. 177-180
Author(s):  
Jyh Liang Wang ◽  
Chun Chien Tsai ◽  
Chuan Chou Hwang ◽  
Tsang Yen Hsieh
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Laser Annealing ◽  
Electrical Characteristics ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Excimer Laser Crystallization ◽  
Bottom Gate

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

Enlargement of P-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance P-Si TFT

1991 ◽  
Author(s):  
S. Noguchi ◽  
H. Kuriyama ◽  
S. Kiyama ◽  
T. Kuwahara ◽  
T. Nohda ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Excimer Laser Annealing
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