Data Retention Characterization of Phase-Change Memory Arrays

2007 ◽  
Author(s):  
B. Gleixner ◽  
A. Pirovano ◽  
J. Sarkar ◽  
F. Ottogalli ◽  
E. Tortorelli ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Memory Arrays ◽  
Change Memory

Electrical characterization of anomalous cells in phase change memory arrays

2006 ◽  
Author(s):  
D. Mantegazza ◽  
D. Ielmini ◽  
A. Pirovano ◽  
B. Gleixner ◽  
A. L. Lacaita ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Electrical Characterization ◽  
Memory Arrays ◽  
Change Memory

Characterization of In20Ge15Sb10Te55Phase Change Material for Phase Change Memory with Low Power Operation and Good Data Retention

2012 ◽  
Vol 51 (3R) ◽  
pp. 031201
Author(s):  
Takahiro Morikawa ◽  
Kenzo Kurotsuchi ◽  
Yoshihisa Fujisaki ◽  
Yuichi Matsui ◽  
Norikatsu Takaura
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Data Retention ◽  
Good Data ◽  
Power Operation ◽  
Change Material ◽  
Change Memory

Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

2009 ◽  
Vol 30 (2) ◽  
pp. 126-129 ◽  
Author(s):  
B. Rajendran ◽  
M. Breitwisch ◽  
Ming-Hsiu Lee ◽  
G.W. Burr ◽  
Yen-Hao Shih ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Dynamic Resistance ◽  
Change Memory

Investigation of Ge-Sn-Te alloy for long data retention and high speed phase change memory application

2013 ◽  
Vol 103 (14) ◽  
pp. 142112 ◽  
Author(s):  
Zhonghua Zhang ◽  
Sannian Song ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Change Memory

Investigation of Time Instability Factors in Ti-SbxTe Based Phase Change Memory

2013 ◽  
Vol 873 ◽  
pp. 825-830 ◽  
Author(s):  
Xing Long Ji ◽  
Liang Cai Wu ◽  
Feng Rao ◽  
Zhi Tang Song ◽  
Min Zhu ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Crystallization Process ◽  
Phase Change Memory ◽  
Structure Model ◽  
Data Retention ◽  
Spontaneous Crystallization ◽  
Change Trend ◽  
Band Structure Model ◽  
Change Memory

In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15. The drift coefficients of both components are calculated and compared under room temperature. The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials. And the data retention change trend is also presented. The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.

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