The Impact of Inner Pickup on ESD Robustness of Multi-Finger NMOS in Nanoscale CMOS Technology

2006 ◽  
Author(s):  
Ming-dou Ker ◽  
Hsin-chyh Hsu
Keyword(s):  
Cmos Technology ◽  
Nanoscale Cmos ◽  
The Impact

scholarly journals Analysis of Phase Noise in 28 nm CMOS LC Oscillator Differential Topologies: Armstrong, Colpitts, Hartley and Common-Source Cross-Coupled Pair

2015 ◽  
Vol 24 (04) ◽  
pp. 1550052 ◽  
Author(s):  
Ilias Chlis ◽  
Domenico Pepe ◽  
Domenico Zito
Keyword(s):  
Phase Noise ◽  
Flicker Noise ◽  
Cmos Technology ◽  
Major Effect ◽  
Common Source ◽  
Nanoscale Cmos ◽  
Lc Oscillator ◽  
Lc Oscillators ◽  
The Impact ◽  
28 Nm

Comparative Phase Noise analyses of common-source cross-coupled pair, Colpitts, Hartley and Armstrong differential oscillator circuit topologies, designed in 28 nm bulk CMOS technology in a set of common conditions for operating frequencies in the range from 1 GHz to 100 GHz, are carried out in order to identify their relative performance. The impulse sensitivity function (ISF) is used to carry out qualitative and quantitative analyses of the noise contributions exhibited by each circuit component in each topology, allowing an understanding of their impact on phase noise. The comparative analyses show the existence of five distinct frequency regions in which the four topologies rank unevenly in terms of best phase noise performance. Moreover, the results obtained from the ISF show the impact of flicker noise contribution as the major effect leading to phase noise degradation in nanoscale CMOS LC oscillators.

scholarly journals A Novel Chaotic Neural Network Using Memristive Synapse with Applications in Associative Memory

2012 ◽  
Vol 2012 ◽  
pp. 1-19 ◽  
Author(s):  
Xiaofang Hu ◽  
Shukai Duan ◽  
Lidan Wang
Keyword(s):  
Neural Network ◽  
Associative Memory ◽  
Large Scale ◽  
Cmos Technology ◽  
Chaotic Neural Network ◽  
Circuit Element ◽  
Nanoscale Cmos ◽  
Dynamical Behaviors ◽  
Implementation Scheme ◽  
Further Development

Chaotic Neural Network, also denoted by the acronym CNN, has rich dynamical behaviors that can be harnessed in promising engineering applications. However, due to its complex synapse learning rules and network structure, it is difficult to update its synaptic weights quickly and implement its large scale physical circuit. This paper addresses an implementation scheme of a novel CNN with memristive neural synapses that may provide a feasible solution for further development of CNN. Memristor, widely known as the fourth fundamental circuit element, was theoretically predicted by Chua in 1971 and has been developed in 2008 by the researchers in Hewlett-Packard Laboratory. Memristor based hybrid nanoscale CMOS technology is expected to revolutionize the digital and neuromorphic computation. The proposed memristive CNN has four significant features: (1) nanoscale memristors can simplify the synaptic circuit greatly and enable the synaptic weights update easily; (2) it can separate stored patterns from superimposed input; (3) it can deal with one-to-many associative memory; (4) it can deal with many-to-many associative memory. Simulation results are provided to illustrate the effectiveness of the proposed scheme.

scholarly journals The Impact of Microelectronics on High Energy Physics Innovation: The Role of 65 nm CMOS Technology on New Generation Particle Detectors

2021 ◽  
Vol 9 ◽  
Author(s):  
N. Demaria
Keyword(s):  
Particle Physics ◽  
High Energy Physics ◽  
Hadron Collider ◽  
Cmos Technology ◽  
High Energy ◽  
Main Role ◽  
Noise Power ◽  
Recent Developments ◽  
The Impact ◽  
Energy Physics

The High Luminosity Large Hadron Collider (HL-LHC) at CERN will constitute a new frontier for the particle physics after the year 2027. Experiments will undertake a major upgrade in order to stand this challenge: the use of innovative sensors and electronics will have a main role in this. This paper describes the recent developments in 65 nm CMOS technology for readout ASIC chips in future High Energy Physics (HEP) experiments. These allow unprecedented performance in terms of speed, noise, power consumption and granularity of the tracking detectors.

scholarly journals A High-Performance Skin Impedance Measurement Circuit for Biomedical Applications

2019 ◽  
Vol 28 (07) ◽  
pp. 1950110 ◽  
Author(s):  
K. Hayatleh ◽  
S. Zourob ◽  
R. Nagulapalli ◽  
S. Barker ◽  
N. Yassine ◽  
...  
Keyword(s):  
Biomedical Applications ◽  
High Performance ◽  
Impedance Measurement ◽  
Cmos Technology ◽  
Skin Impedance ◽  
Instrumentation Amplifier ◽  
Measurement Circuit ◽  
Silicon Area ◽  
The Impact ◽  
Mode Interference

This paper describes a high-performance impedance measurement circuit for the application of skin impedance measurement in the early detection of skin cancer. A CMRR improvement technique has been adopted for OTAs to reduce the impact of high-frequency common mode interference. A modified three-OTA instrumentation amplifier (IA) has been proposed to help with the impedance measurement. Such systems offer a quick, noninvasive and painless procedure, thus having considerable advantages over the currently used approach, which is based upon the testing of a biopsy sample. The sensor has been implemented in 65[Formula: see text]nm CMOS technology and post-layout simulations confirm the theoretical claims we made and sensor exhibits sensitivity. Circuit consumes 45[Formula: see text]uW from 1.5[Formula: see text]V power supply. The circuit occupies 0.01954[Formula: see text]mm2 silicon area.

Size Independent Sensitivity to Biomolecular Surface Density Using Nanoscale CMOS Technology Transistors

2020 ◽  
Vol 20 (16) ◽  
pp. 8956-8964
Author(s):  
Mihir Gupta ◽  
Sybren Santermans ◽  
Bert Du Bois ◽  
Rita Vos ◽  
Simone Severi ◽  
...  
Keyword(s):  
Surface Density ◽  
Cmos Technology ◽  
Nanoscale Cmos ◽  
Biomolecular Surface

scholarly journals Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4663
Author(s):  
Rafel Perello-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Fluid Flow ◽  
Gas Sensing ◽  
Low Cost ◽  
Cmos Technology ◽  
Monolithically Integrated ◽  
Impact Reduction ◽  
Mems Resonators ◽  
Cmos Mems ◽  
Outstanding Result ◽  
The Impact

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure.

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